Transfer characteristics of 3, 5, 10, and 30 nm thick ZnO-layers obtained from measurements (a) in nitrogen and (b) in air.
Influence of the film thickness and atmosphere on the (a) linear mobility, (b) on-set, (c) hysteresis, and the (d) subthreshold slope of zinc oxide transistors.
Sketch of an active layer cross section for increasing layer thickness.
Transfer characteristics of ZnO-TFTs under positive and negative gate bias stress in air having (a) 10 nm and (b) 30 nm thick active layer.
Transfer characteristics measured in air showing the long term storage stability of ZnO-TFTs having active layers of (a) 10 nm and (b) 30 nm film thickness.
On-set shift of ZnO-TFTs due to 30 days storage in air or 4000 s positive/negative bias stress in air for 10 nm and 30 nm thick devices.
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