1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Stability and spacial trap state distribution of solution processed ZnO-thin film transistors
Rent:
Rent this article for
USD
10.1063/1.4801892
/content/aip/journal/jap/113/15/10.1063/1.4801892
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/15/10.1063/1.4801892
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Transfer characteristics of 3, 5, 10, and 30 nm thick ZnO-layers obtained from measurements (a) in nitrogen and (b) in air.

Image of FIG. 2.
FIG. 2.

Influence of the film thickness and atmosphere on the (a) linear mobility, (b) on-set, (c) hysteresis, and the (d) subthreshold slope of zinc oxide transistors.

Image of FIG. 3.
FIG. 3.

Sketch of an active layer cross section for increasing layer thickness.

Image of FIG. 4.
FIG. 4.

Transfer characteristics of ZnO-TFTs under positive and negative gate bias stress in air having (a) 10 nm and (b) 30 nm thick active layer.

Image of FIG. 5.
FIG. 5.

Transfer characteristics measured in air showing the long term storage stability of ZnO-TFTs having active layers of (a) 10 nm and (b) 30 nm film thickness.

Image of FIG. 6.
FIG. 6.

On-set shift of ZnO-TFTs due to 30 days storage in air or 4000 s positive/negative bias stress in air for 10 nm and 30 nm thick devices.

Loading

Article metrics loading...

/content/aip/journal/jap/113/15/10.1063/1.4801892
2013-04-16
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stability and spacial trap state distribution of solution processed ZnO-thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/15/10.1063/1.4801892
10.1063/1.4801892
SEARCH_EXPAND_ITEM