X-ray diffraction patterns of Sn-doped BNKT ceramics as a function of Sn concentration.
P(E) and S(E) hysteresis loops at room temperature for Sn-doped BNKT ceramics.
Changes in S pol, S rem, and the difference between them (S pol − S rem) as a function of Sn concentration.
The temperature dependent relative dielectric constant (ε r) and dielectric loss (tan δ) for poled Sn-doped BNKT ceramics. The Sn content x was (a) 0, (b) 0.02, (c) 0.05, and (d) 0.08, respectively.
Small signal ε 33(E) measured at 1 kHz of BNKTxSn as a function of electric field.
Dielectric signals in comparison with the current flow during polarization reversal of BNKTxSn.
Small signal d 33(E) as a function of electric field.
Electric field-induced strain behavior of BNKT0.08Sn specimen: (a) S-P 2 plot and (b) temperature dependence of the electrostrictive coefficient and the electric field-induced strain (the inset).
S max/E max of BNKTxSn as a function of temperature.
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