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Incipient piezoelectrics and electrostriction behavior in Sn-doped Bi1/2(Na0.82K0.18)1/2TiO3 lead-free ceramics
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10.1063/1.4801893
/content/aip/journal/jap/113/15/10.1063/1.4801893
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/15/10.1063/1.4801893
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction patterns of Sn-doped BNKT ceramics as a function of Sn concentration.

Image of FIG. 2.
FIG. 2.

P(E) and S(E) hysteresis loops at room temperature for Sn-doped BNKT ceramics.

Image of FIG. 3.
FIG. 3.

Changes in S pol, S rem, and the difference between them (S polS rem) as a function of Sn concentration.

Image of FIG. 4.
FIG. 4.

The temperature dependent relative dielectric constant (ε r) and dielectric loss (tan δ) for poled Sn-doped BNKT ceramics. The Sn content x was (a) 0, (b) 0.02, (c) 0.05, and (d) 0.08, respectively.

Image of FIG. 5.
FIG. 5.

Small signal ε 33(E) measured at 1 kHz of BNKTxSn as a function of electric field.

Image of FIG. 6.
FIG. 6.

Dielectric signals in comparison with the current flow during polarization reversal of BNKTxSn.

Image of FIG. 7.
FIG. 7.

Small signal d 33(E) as a function of electric field.

Image of FIG. 8.
FIG. 8.

Electric field-induced strain behavior of BNKT0.08Sn specimen: (a) S-P 2 plot and (b) temperature dependence of the electrostrictive coefficient and the electric field-induced strain (the inset).

Image of FIG. 9.
FIG. 9.

S max/E max of BNKTxSn as a function of temperature.

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/content/aip/journal/jap/113/15/10.1063/1.4801893
2013-04-17
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Incipient piezoelectrics and electrostriction behavior in Sn-doped Bi1/2(Na0.82K0.18)1/2TiO3 lead-free ceramics
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/15/10.1063/1.4801893
10.1063/1.4801893
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