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Junction array carbon nanotube bolometer
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10.1063/1.4802582
/content/aip/journal/jap/113/16/10.1063/1.4802582
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/16/10.1063/1.4802582
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM images of MWNT forest on Si substrate taken at (a) low and (b) high magnifications.

Image of FIG. 2.
FIG. 2.

(a) Dependences of dc photovoltage VP (top) and differential photoresistance dVP/dI (bottom) on bias current I taken at different temperatures; (b) Dependences of differential resistances of forest in dark (dVD/dI, black) and irradiated (dVL/dI, red) states on bias current I taken at different temperatures; (c) Dependences of amplitudes of first (VH 1, top) and second (VH 2, bottom) lock-in harmonics of ac photovoltage on bias current at sinusoidal 25 Hz laser excitation taken at different temperatures; (d) Dependences of photovoltage VP on power of incident radiation at several bias currents taken at 114 K using triangular laser excitation.

Image of FIG. 3.
FIG. 3.

(a) Temperature dependences of first (VH 1), second (VH 2), and third (VH 3) lock-in harmonics of ac photovoltage at sinusoidal 25 Hz laser excitation recorded at bias current I = 1.5 mA; (b) Dependences of average dc forest resistance R and numerically evaluated temperature coefficient of resistance (TCR) α = −1/R * dR/dT; (c) Temperature dependences of forest resistance in dark (RD ) and irradiated (RL ) states as well voltage responsivity V estimated from time traces of bolometric signal at triangular laser excitation; bias current I = 1.5 mA.

Image of FIG. 4.
FIG. 4.

(a) Frequency dependences of first (VH 1) lock-in harmonic of ac photovoltage at sinusoidal laser excitation recorded at different temperatures; (b) Time traces of photovoltage induced by triangular laser excitation of variable frequency recorded at 114 K. Time scale was multiplied by excitation frequency; bias current I = 1.5 mA.

Image of FIG. 5.
FIG. 5.

(a) Time traces of photovoltage at sinusoidal 25 Hz laser excitation taken at different temperatures; bias current I = 1.5 mA. Red lines corresponding to noise-free signal were obtained by digital smoothing the time traces. (b) Temperature dependences of root mean square noise (VN ), signal (VS ) voltages, and signal-to-noise ratio (SNR) evaluated from time traces.

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/content/aip/journal/jap/113/16/10.1063/1.4802582
2013-04-26
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Junction array carbon nanotube bolometer
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/16/10.1063/1.4802582
10.1063/1.4802582
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