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Response to “Comment on ‘A model for internal photoemission at high-k oxide/silicon energy barriers’” [J. Appl. Phys. 113, 166101 (2013)]
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FIG. 1.

(a) Conduction band diagram of a Si/1.5 nm/18.5 nm Si/SiO2/HfO2 structure with an applied voltage of 2 V across the oxide. A gradual transition is assumed for the SiO2/HfO2 interface (not important for the result in (b)). (b) Logarithm of photoyield for the structure in (a) as a function of photon energy. The calculation in (b) includes tunneling through the 1.5 nm interlayer, integrated along photon energy as marked by the red vertical arrow in (a). The blue arrow in (a) marks excitation from the Si valence band.

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2013-04-29
2014-04-21

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Scitation: Response to “Comment on ‘A model for internal photoemission at high-k oxide/silicon energy barriers’” [J. Appl. Phys. 113, 166101 (2013)]
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/16/10.1063/1.4802675
10.1063/1.4802675
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