(a) Illustration of sample preparation. (b) Wire geometry: due to shadowing by the resist mask during sputter deposition of the metal film, less material is deposited at the triangular-pointed wire end with tip-opening angle θ.
(a) Transmission x-ray micrograph and (b) through (d) corresponding differential images (the respective previous image serves as reference) of a wire with a nucleation pad (bottom, not completely visible), a notch marked by the arrow in (a), and a triangular-pointed end (top) recorded at the given field values after saturation at −200 mT.
(a) Scanning electron micrographs of wires with various opening angles of the tip's end. (b) Switching field versus tip-opening angle determined by transmission x-ray microscopy for three different widths of nanowires.
(a) Dependences of the switching field on the opening angle θ of the tip simulated for a wire with homogeneous anisotropy (black squares) as well as for wires with a linear reduction of the local anisotropy constant in the tip area from K 1 to (other color) as sketched on the right hand side. (b) Dependence of the switching fields on the total reduction of the anisotropy constant along the decrease length d simulated for rectangular-shaped wires. (c) Same data as in (b) plotted versus tip-opening angle θ that corresponds to a certain decrease length d as illustrated on the right hand side.
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