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Impact of rapid thermal processing on oxygen precipitation in heavily arsenic and antimony doped Czochralski silicon
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10.1063/1.4803061
/content/aip/journal/jap/113/16/10.1063/1.4803061
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/16/10.1063/1.4803061

Figures

Image of FIG. 1.
FIG. 1.

TEM images illustrating typical BMDs in (a) As-doped Cz silicon and (b) Sb-doped Cz silicon specimens, after a thermal treatment at 800  °C for 32 h + 1000  °C for 32 h, (c) Sb-doped Cz silicon specimens annealed at 900  °C for 32 h. All specimens received a prior RTP at 1250  °C for 60 s.

Image of FIG. 2.
FIG. 2.

Typical OM images of BMDs observed after preferential etching of As-doped specimens subjected to anneals at 800  °C for 32 h + 1000  °C for 32 h, at 900  °C for 32 h, and at 1000  °C for 32 h, with (right column) and without (left column) a prior RTP at 1250  °C for 60 s, respectively.

Image of FIG. 3.
FIG. 3.

Typical OM images of BMDs observed after preferential etching of Sb-doped Cz silicon specimens subjected to anneals at 800  °C for 32 h + 1000  °C for 32 h, at 900  °C for 32 h, and at 1000  °C for 32 h, with (right column) and without (left column) a prior RTP at 1250  °C for 60 s, respectively.

Image of FIG. 4.
FIG. 4.

Configurations of DV, DO, and DVO complexes before and after structure relaxation in As or Sb doped silicon. The yellow, blue, white, and red balls represent a silicon atom, a dopant (As or Sb) atom, a vacancy and an oxygen atom, respectively.

Image of FIG. 5.
FIG. 5.

Schematic representation of the movement of a vacancy towards a substitutional dopant atom or an interstitial oxygen atom. Initially, the vacancy is in the middle between the dopant and the oxygen atom. The total energy and the binding energy are calculated in each nearest neighbor position.

Tables

Generic image for table
Table I.

Binding energies in eV of DV, DO, and DVO complexes calculated under constant lattice parameter (0.543 nm) (top) and under constant zero pressure conditions (bottom).

Generic image for table
Table II.

Energy difference in eV due to introduction of a vacancy calculated for constant zero pressure as function of the position of the vacancy with respect to the dopant (As or Sb) or the Oi atom as schematically shown in Fig. 5 .

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/content/aip/journal/jap/113/16/10.1063/1.4803061
2013-04-29
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of rapid thermal processing on oxygen precipitation in heavily arsenic and antimony doped Czochralski silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/16/10.1063/1.4803061
10.1063/1.4803061
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