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Well controlled multiple resistive switching states in the Al local doped HfO2 resistive random access memory device
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10.1063/1.4803076
/content/aip/journal/jap/113/16/10.1063/1.4803076
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/16/10.1063/1.4803076
/content/aip/journal/jap/113/16/10.1063/1.4803076
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/content/aip/journal/jap/113/16/10.1063/1.4803076
2013-04-30
2014-08-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Well controlled multiple resistive switching states in the Al local doped HfO2 resistive random access memory device
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/16/10.1063/1.4803076
10.1063/1.4803076
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