Schematic of the experimental setup for BA-HXPES.
Bias-dependent Si 1s spectra in the Si substrate region for the 1.8% SiON/Si(100) structure. Each bias voltage is applied to Si with respect to the Ru metal layer. Incident photon angle is 5° from the surface normal and the take-off angle is 85°.
Band diagram for a metal/oxide/p-type Si structure. (a) At zero bias and (b) under a negative bias voltage applied to Si with respect to the metal.
Plots of the energy shifts of the Si 1s peak for the Ru/oxide/Si(100) structures. (a) Ru/SiO2/Si(100), (b) Ru/1.2% SiON/Si(100), and (c) Ru/1.8% SiON/Si(100).
Energy distribution of the interface states for (a) SiO2/Si(100), (b)1.2% SiON/Si(100), and (c) 1.8% SiON/Si(100). Valence band maximum is set to the energy origin.
N1s spectra for (a) 1.8% SiON/Si(100) structure and (b) 1.2% SiON/Si(100) structure. This observation was performed without the topmost Ru metal layer.
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