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Bias-voltage application in a hard x-ray photoelectron spectroscopic study of the interface states at oxide/Si(100) interfaces
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10.1063/1.4803491
/content/aip/journal/jap/113/16/10.1063/1.4803491
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/16/10.1063/1.4803491
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Figures

Image of FIG. 1.
FIG. 1.

Schematic of the experimental setup for BA-HXPES.

Image of FIG. 2.
FIG. 2.

Bias-dependent Si 1s spectra in the Si substrate region for the 1.8% SiON/Si(100) structure. Each bias voltage is applied to Si with respect to the Ru metal layer. Incident photon angle is 5° from the surface normal and the take-off angle is 85°.

Image of FIG. 3.
FIG. 3.

Band diagram for a metal/oxide/p-type Si structure. (a) At zero bias and (b) under a negative bias voltage applied to Si with respect to the metal.

Image of FIG. 4.
FIG. 4.

Plots of the energy shifts of the Si 1s peak for the Ru/oxide/Si(100) structures. (a) Ru/SiO2/Si(100), (b) Ru/1.2% SiON/Si(100), and (c) Ru/1.8% SiON/Si(100).

Image of FIG. 5.
FIG. 5.

Energy distribution of the interface states for (a) SiO2/Si(100), (b)1.2% SiON/Si(100), and (c) 1.8% SiON/Si(100). Valence band maximum is set to the energy origin.

Image of FIG. 6.
FIG. 6.

N1s spectra for (a) 1.8% SiON/Si(100) structure and (b) 1.2% SiON/Si(100) structure. This observation was performed without the topmost Ru metal layer.

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/content/aip/journal/jap/113/16/10.1063/1.4803491
2013-04-30
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bias-voltage application in a hard x-ray photoelectron spectroscopic study of the interface states at oxide/Si(100) interfaces
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/16/10.1063/1.4803491
10.1063/1.4803491
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