Scanning electron microscopy image of heterostructured GaAs/Al03 As/GaAs core/inner shell/outer shell nanowires.
Compositional profiles of the heterostructured nanowire with thin tunneling transparent barrier obtained by energy-dispersive x-ray spectroscopy measurements. Blue, green, and red lines correspond to As, Ga, and Al, respectively. The scale bar is 50 nm.
High-resolution transmission electron microscopy image of the heterostructured nanowire. The WZ and ZB segments are indicated.
Raman spectra measured at the temperature 10 K in heterostructured GaAs/Al03Ga0.7As/GaAs core/inner shell/outer shell nanowires. Types of vibrational modes are labeled according to the text.
Photoluminescence spectrum measured at the temperature 1.6 K in heterostructured GaAs/Al03Ga0.7As/GaAs core/inner shell/outer shell nanowires. Types of optical transitions are labeled according to Fig. 6 .
Schematic representation of the energy structure of heterostructured GaAs/Al03Ga0.7As/GaAs core/inner shell/outer shell nanowires. Full and dashed lines are for zincblende and wurtzite segments. The energy levels shown represent the electrons accumulated in the center of the GaAs core and at the heterointerface between the outer GaAs shell and the Al03Ga0.7As inner shell, as well as the holes accumulated at the heterointerface between the GaAs core and the AlGaAs inner shell. Red arrows show electron transitions contributing to the photoluminescence.
Characteristic energies of optical transitions observed in GaAs/AlGaAs/GaAs core/inner shell/outer shell nanowires.
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