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Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a metal–oxide–semiconductor field effect transistor structure (invited)
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10.1063/1.4793501
/content/aip/journal/jap/113/17/10.1063/1.4793501
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4793501
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional (a) low-magnification and (b) high-resolution TEM images of CoFe/Si(111) interface. (c) Crystal structures of bcc-type FM and Si.

Image of FIG. 2.
FIG. 2.

(a) Schematic diagram of a Si-MOSFET structure with a CoFe/ -Si Schottky-tunnel contact fabricated. (b) characteristics for various at room temperature. The inset shows vs at . (c) and (d) curves for various at room temperature.

Image of FIG. 3.
FIG. 3.

Room-temperature spin accumulation signals measured at for various  = (a) −2.0, (b) −1.0, (c) −0.5, and (d) −0.1 A. The red curves are fitting results by the Lorentzian function.

Image of FIG. 4.
FIG. 4.

Room-temperature spin accumulation signals measured at (a) and (b) = 74 V at . The red curves are fitting results by the Lorentzian function. (c) vs at various at room temperature.

Image of FIG. 5.
FIG. 5.

Spin lifetime ( ) and channel resistivity ( ) as a function of at room temperature.

Image of FIG. 6.
FIG. 6.

The estimated tunnel spin polarization () and the spin as a function of at room temperature.

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/content/aip/journal/jap/113/17/10.1063/1.4793501
2013-02-26
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a metal–oxide–semiconductor field effect transistor structure (invited)
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4793501
10.1063/1.4793501
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