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Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a metal–oxide–semiconductor field effect transistor structure (invited)
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Using a metal-oxide-semiconductor field effect transistor structure with a high-quality CoFe/n +-Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ∼4.5 × 1015 cm−3 at room temperature. By applying the gate voltage ( ) to the channel, we obtain sufficient bias currents ( ) for creating spin accumulation in the channel and observe clear spin-accumulation signals even at room temperature. Whereas the magnitude of the spin signals is enhanced by increasing , it is reduced by increasing interestingly. These features can be understood within the framework of the conventional spin diffusion model. As a result, a room-temperature spin injection technique for the nondegenerated Si channel without using insulating tunnel barriers is established, which indicates a technological progress for Si-based spintronic applications with gate electrodes.
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