X-ray diffraction pattern of a Zn0.96Mn0.04O film. Inset shows the typical AFM scan of films.
Bipolar dc current-voltage switching operation of a 120 nm-thick, 2 × 2.5 mm2-wide film device. Inset shows the current-voltage characteristic before the forming process.
Read cycle in both states over repeated read operations of a 120 nm-thick, 2 × 2.5 mm2-wide film device. A current pulse of J = 1 A/cm2 and duration 0.5 s are applied during reading with a repetition rate of 60 s.
Magnetization versus in-plane applied field of a 120 nm-thick, 2 × 2.5 mm2-wide film device at T = 300 K. The change of magnetic moment at saturation ΔM S is 40%.
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