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Non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO films
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10.1063/1.4793639
/content/aip/journal/jap/113/17/10.1063/1.4793639
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4793639
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction pattern of a ZnMnO film. Inset shows the typical AFM scan of films.

Image of FIG. 2.
FIG. 2.

Bipolar dc current-voltage switching operation of a 120 nm-thick, 2 × 2.5 mm-wide film device. Inset shows the current-voltage characteristic before the forming process.

Image of FIG. 3.
FIG. 3.

Read cycle in both states over repeated read operations of a 120 nm-thick, 2 × 2.5 mm-wide film device. A current pulse of  = 1 A/cm and duration 0.5 s are applied during reading with a repetition rate of 60 s.

Image of FIG. 4.
FIG. 4.

Magnetization versus in-plane applied field of a 120 nm-thick, 2 × 2.5 mm-wide film device at T = 300 K. The change of magnetic moment at saturation ΔM is 40%.

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/content/aip/journal/jap/113/17/10.1063/1.4793639
2013-02-27
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO films
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4793639
10.1063/1.4793639
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