Magnetization (M) vs. field (H) hysteresis loops measured in a VSM for the samples with average platinum spacer thickness (a) t av = 0.5 nm measured in a field parallel (||) and perpendicular (⊥) to the film plane and (b) t av = 4.5 nm with H perpendicular to the film plane.
Domain nucleation field dependence on the Pt spacer thickness.
Kerr images of domain structure formed at the Pt layer thickness of 5 nm for a field of (a) +14 mT and (b) −14 mT after first saturating the sample at −40 mT and +40 mT, respectively. The “asymmetric” domain nucleation centers are indicated by the arrows.
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