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Enhanced controllability of domain-wall pinning by selective domain-wall injection
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10.1063/1.4794135
/content/aip/journal/jap/113/17/10.1063/1.4794135
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4794135
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Scanning electron microscope image of a 280-nm-wide, 10-nm-thick nanowire, and a nanobar perpendicular to each other with an edge-to-edge separation of approximately 30 nm and an elliptical pad. A and B on the wire indicate the positions of the probing laser spot for the MOKE measurement. The inset shows the high resolution image of the notch. The arrows indicate the magnetic field directions of and with the saturation angle .

Image of FIG. 2.
FIG. 2.

(a) Injection fields with respect to the saturation angle. (b) Depinning fields from the notch with the nanobar with respect to the saturation angle. (c) Difference between and according to the saturation angle. Outward and inward magnetizations of the nanobar are observed at the saturation angles of less than and more than 180°, respectively. The dashed lines separate outward and inward magnetized regimes with respect to the saturation angle.

Image of FIG. 3.
FIG. 3.

Micromagnetic simulations of DWs: (I) CV DW and (II) CCV DW in the outward magnetization of the nanobar, and (III) CV-DW and (IV) CCV-DW in the inward magnetization of the nanobar. Diagrams of magnetostatic interaction energy for different DW types with respect to the DW position from the center of the nanobar are (a) in the outward magnetization and (b) in the inward magnetization of the nanobar. The symbols indicate simulated data.

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/content/aip/journal/jap/113/17/10.1063/1.4794135
2013-03-04
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced controllability of domain-wall pinning by selective domain-wall injection
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4794135
10.1063/1.4794135
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