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Temperature dependence of the resistance for Ga0.98Mn0.02As at zero magnetic field. The peak position of the resistance provides an estimate of TC as 25 K. The inset shows coordinates for current I, external field H, and magnetization M.
Angular dependence of Hall resistance obtained for two measurement configurations. The data in the left panel are obtained by rotating a field of 1000 Oe within the film plane, i.e., by varying ; that in the right panel is obtained by varying , using a field of 500 Oe. The open (red) and solid (black) circles show data obtained by CW and CCW rotations of the field, respectively.
Details of the process of magnetization reversal for a magnetic field applied in the plane along . By analyzing the values of PHR at specific points marked as (a)–(f), fractions of the sample area corresponding to magnetic domains with easy axes in-plane and out-of-plane are obtained. The calculated ratio between the fractions of domains dominated by in-plane and out-of-plane orientations of magnetization is about 1:5.7.
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