1 μm2 AFM scan images of 100 nm thick ZnO films deposited with O2 flow of 2.5 SCCM at TS = (a) 600 °C, (b) 700 °C, (c) 800 °C, and (d) the corresponding electrical resistivity ρ at RT.
Low temperature PL spectra taken at 5 K of 100 nm thick ZnO films deposited with O2 flow of 2.5 SCCM at TS = (a) 600 °C, (b) 700 °C, and (c)800 °C, respectively.
XRD spectra of samples deposited at 600 °C (top: with O2 flow of 2.0 SCCM; bottom: with O2 flow of 2.5 SCCM).
In plane and out of plane magnetization loops at RT of sample (a)without [Co3Pt film was annealed at 600 °C], and (b) with the top 15 nm thick ZnO film deposited at 600 °C with an O2 flow of 2.0 SCCM.
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