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Temperature dependence of magnetization as a function of film thickness measured at an applied field of 1 kOe (a) and 50 kOe (b). The inset in (a)gives the ratio of the residual magnetization at 100 K to the magnetization at 400 K for various thicknesses, where the filled and open circles give the data for the films with the composition optimized at the thickness of 80 nm and 10 nm, respectively.
Magnetization curves measured at 300 K for various thicknesses, showing large residual magnetization increase when the film thickness is reduced to less than 8 nm. The inset gives the saturation magnetization (Ms) obtained at 100 K and 300 K, showing different Ms variations when the film thickness is reduced from 5 nm to 3 nm.
AFM images for FeRh films with different thicknesses, showing significant reduction in grain size when the film thickness is reduced from 8 nm to 5 nm.
Transition temperature (Ttr) and residual magnetization (Mrs) at 100 K as a function of magnetic field, showing a linear shift of the transition temperature and the field-induced ferromagnetic stability.
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