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EuO/Si(001) heterostructure with SiO x passivation. Right: Interface-sensitive Si 1s core-level spectra for different SiO x passivations of the Si(001) surface.
HAXPES analysis of the EuO/Si interface. (a) and (b) Si 1s and 2p core-levels recorded at low excitation energy ( ) to probe selectively the Si surface. (c)–(e) Eu 3d, 4d core, and 4f valence-levels (in agreement with Refs. 20–22 ) recorded at high excitation energy ( ) to fully probe the buried reaction layer at the bottom of the EuO thin film.
Chemical properties and crystalline structure of EuO on passivated Si. Thicknesses of SiO x passivation and the resulting EuSi y are determined from Si 1s and 2p spectra. Inset: RHEED after 4 nm EuO growth.
Magnetic properties of the 4 nm EuO/Si(001) heterostructures dependent on the thickness of the Si(001) surface passivation.
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