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The morphology of the LSCMO and CeO2 films for sample A (a) and (b) and for sample B (c) and (d), respectively. The insets show the rocking curve of corresponding films, respectively.
The I-V characteristics of sample A (a) and sample B (b). Insets show the schematic structures of the sample A and sample B, respectively.
The hysteresis loops under different resistance states at 5 K for sample B (a) and for sample A (b). Insets show the magnification of the hysteresis loops at high forward external magnetic field. OS, original state; LRS (+3 V), after the device was switched into LRS at a voltage stimulus of +3 V, the M-H curve was measured.
The temperature dependence of the magnetization in an external field of 1 T for sample A (a) and sample B (b). Insets show the difference between difference resistance states.
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