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(a) High-magnification TEM image of a single CrSi2/SiO2 nanocable. (b) HRTEM micrograph of CrSi2 phase from red local region in (a). (c)Multislice simulation of image for the fixed lattice constant. (d) Multislice simulation of image for the unfixed lattice constant.
Simulated average magnetizations of Cr atoms from every layer versus the distance to interface corresponding to the atomic arrangements around SiO2/CrSi2/SiO2 interface with unfixed lattice constants (fixed constraint not presented) are shown below. The positions of marked Cr atoms will be used in Fig. 4 .
Bonding structure of the Cr atom around the interface(i) and total spin density of states (DOS) of this associated Cr atom. And bonding structure of the Cr atom in the bulk(b) and DOS of this associated Cr atom.
(a) Bright field and energy-filtered TEM images of Si, Cr, and O. (b)Distributions of chemical species (Si, Cr, and O) versus the distance to the interface from the dotted rectangular region marked in (a). (c) Simulated oxygen distribution (normalized) around the interface associated with the schematic plot of a nanocable. Horizontal dotted lines in (b) and (c) were plotted to estimate the FWHM of oxygen distribution.
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