Schematic diagram of a side of view of PGCCD.
Bright-field TEM images of the Sn1− x /Si x clusters prepared with (a)x = 0, (b) x = 0.35, and (c) and (d) x = 0.65 deposited in E = 0 kV. The samples of (a)∼(c) have average thickness of 1 nm and one of (d) has average thickness of 30 nm.
(a) and (b) TEM images of the Sn1− x /Si x clusters prepared with x = 0.28. (c) and (d) nano-beam EDX spectra taken from the marked areas in (a) and (b). (e) High-resolution TEM image of the Sn1− x /Si x cluster with x = 0.38. The values in (e) are lattice spacing estimated by the lattice fringes.
(a) XRD patterns of the Sn1− x /Si x cluster assembled films prepared at x = 0, 0.27, 0.47, and 0.54 deposited in E = −20 kV. The closed circles indicate a set of Bragg peaks for the β-Sn structure. (b) Enlarged view of (a) around (220) Bragg peak (closed triangles) of the diamond structure of Si.
Electrical resistance R as a function of magnetic field, H, for the Sn1− x /Si x cluster assembled films prepared at x = 0, 0.23, 0.35, 0.51, and 0.57 deposited in E = −20 kV.
The critical field, Hc , versus plots for the Sn1− x /Si x cluster assembled films deposited in E = −20 kV. The closed squares are obtained in the experiments and the broken line is the theoretical value estimated by Eq. (5) .
A comparison of the mean free path of electron, l, the average diameter of Sn cluster, dAV , the penetration length, λ and the critical field, Hc , for the Sn1− x /Si x cluster assembled films with x < 0.57 deposited in E = −20 kV.
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