(a) Secondary electron image at 1500 ×, (b) BSE image at 15000 ×, (c) cross section of thin film at 15000 ×, and (d) thickness measurement on cross section at 30000 ×.
(a) m vs. T at an applied field of at 100 Oe (7.9 kA/m). (b) Derivative of Fig. 2(a) showing the start and end of the phase transition. Inset figure shows the transition temperature of bulk sample of Gd5Si2.09Ge1.91.
m vs. μ0 H at 200 K showing the ferromagnetic nature of the material inset figure shows m vs. H measurement at 270 K on bulk sample of Gd5Si2.09Ge1.91.
Composition of the film averaged from 3 locations.
X'PERT HIGHSCORE PLUS matched structures of Gd5Si2Ge2 Gd5Ge3 and Gd5Si4.
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