1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Strain effect of multilayer FeN structure on GaAs substrate
Rent:
Rent this article for
USD
10.1063/1.4800086
/content/aip/journal/jap/113/17/10.1063/1.4800086
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4800086
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of FeN thin films L1 and L3. Both samples showed finger print peak (002) at 2θ = 28.5°.

Image of FIG. 2.
FIG. 2.

(a) X-ray reflectivity of FeN samples L1 and L3, (b) electron SLD of L3 was homogeneous through the whole sample, and (c) SLD of L1 stayed the same after the first ∼2 nm bump.

Image of FIG. 3.
FIG. 3.

(a) Reflectivity curve of L1, (b) NSLD and Ms depth profile of L1, (c) reflectivity curve of L3, and (d) NSLD and Ms depth profile of L3. Both (b) and (d) curves showed high Ms region near the substrate with a thickness of ∼5 nm.

Image of FIG. 4.
FIG. 4.

In plane X-ray reflectivity of Fe/FeN on GaAs substrate. FeN was shown to possess a larger lattice constant of 5.75 Å due to the peak FeN (220).

Loading

Article metrics loading...

/content/aip/journal/jap/113/17/10.1063/1.4800086
2013-04-10
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain effect of multilayer FeN structure on GaAs substrate
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4800086
10.1063/1.4800086
SEARCH_EXPAND_ITEM