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XRD pattern (θ-2θ scan) of PSMO/STO. Shown in the inset is the layout of the microbridge and the four-probe configuration used to measure all R-T curves in Figs. 3 and 4 .
Temperature dependences of resistance (left) and magnetization (right) for the PSMO film. The applied field of the dc magnetic measurement is 20 Oe.
(a) Temperature dependences of resistance measured with different currents (I = 1, 50, 100, 200, 500, 1000, and 2000 μA) for the initial state; (b) TP and RP as a function of bias current I.
(a) Metastable states induced by currents of different magnitudes. The measured current is fixed to be 1 μA; (b) temperature dependences of resistance measured with different currents (±1, ±3, and ±9 μA) for the state induced by a current of 5.3 μA. The inset summarizes the temperature of ER = 100% × [R(9 μA) − R(1 μA)]/R(1 μA) for metastable states induced by different currents.
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