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Thickness (tFM ) dependence of coercivity (H c ) in uniaxial anisotropy extended single-layer films, Py (left) and CZT (right). Lower panel demonstrates the linear dependence of on the inverse of tFM , 1/tFM , while remains at the same level at a specific sputtering voltage.
Sputtering voltage dependence of coercivity (H c ) in uniaxial anisotropy extended single-layer films with the optimized thickness, Py 80 nm (left) and CZT 200 nm (right).
BH loops for Co91.5Zr4.0Ta4.5(200 nm)/SiO2(4 nm)/Co91.5Zr4.0Ta4.5(200 nm) structures. The inset at the lower right minor loops on induced hard axis showing linear response with negligible hysteresis loss, at 0 and 10 Oe bias fields. The permeability is slightly reduced in minor loops. (a) 1 cm × 150 μm and (b) 400 μm × 100 μm.
Domain imaging using STXM, with the x-ray photon energy set to Ni L 3 edge for the top Py layer (left panel, showing diamond structure) and Co L 3 edge for the bottom CoFeB layer (right panel, magnetization along the induced easy axis); the dark and bright contrasts refer to magnetization pointing to the right and left, respectively.
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