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Optimization of ultra-soft CoZrTa/SiO2/CoZrTa trilayer elements for integrated inductor structures
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10.1063/1.4801524
/content/aip/journal/jap/113/17/10.1063/1.4801524
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4801524
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Figures

Image of FIG. 1.
FIG. 1.

Thickness () dependence of coercivity (H) in uniaxial anisotropy extended single-layer films, Py (left) and CZT (right). Lower panel demonstrates the linear dependence of on the inverse of , 1/, while remains at the same level at a specific sputtering voltage.

Image of FIG. 2.
FIG. 2.

Sputtering voltage dependence of coercivity (H) in uniaxial anisotropy extended single-layer films with the optimized thickness, Py 80 nm (left) and CZT 200 nm (right).

Image of FIG. 3.
FIG. 3.

BH loops for CoZrTa(200 nm)/SiO(4 nm)/CoZrTa(200 nm) structures. The inset at the lower right minor loops on induced hard axis showing linear response with negligible hysteresis loss, at 0 and 10 Oe bias fields. The permeability is slightly reduced in minor loops. (a) 1 cm × 150 m and (b) 400 m × 100 m.

Image of FIG. 4.
FIG. 4.

Domain imaging using STXM, with the x-ray photon energy set to Ni edge for the top Py layer (left panel, showing diamond structure) and Co edge for the bottom CoFeB layer (right panel, magnetization along the induced easy axis); the dark and bright contrasts refer to magnetization pointing to the right and left, respectively.

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/content/aip/journal/jap/113/17/10.1063/1.4801524
2013-04-12
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optimization of ultra-soft CoZrTa/SiO2/CoZrTa trilayer elements for integrated inductor structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4801524
10.1063/1.4801524
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