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Temperature dependence of charge carrier mobility in single-crystal chemical vapour deposition diamond
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10.1063/1.4802679
/content/aip/journal/jap/113/17/10.1063/1.4802679
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4802679

Figures

Image of FIG. 1.
FIG. 1.

Sketch of the measurement set-up.

Image of FIG. 2.
FIG. 2.

The schematics of the α-TCT set-up.

Image of FIG. 3.
FIG. 3.

Averaged current pulses for holes (left column) and electrons (right column) at various temperatures for (top row) and (bottom row) are shown for . The pulses for 2 K and 50 K overlap almost completely for both electron and holes. Note as well the similarity of electron pulses at 150 K and 295 K. Pulses from and are very similar and hence omitted.

Image of FIG. 4.
FIG. 4.

The transit times for holes (a) and electrons (b) at various temperatures and fields are shown for . Note the double logarithmic scale. Lines are drawn for constant voltages in order to guide the eye.

Image of FIG. 5.
FIG. 5.

The drift velocity is plotted against the electric field for different temperatures for . The superimposed solid lines are fits after Eq. (3) . The dotted line shows the saturation velocity for holes, which is independent of the temperature, see Fig. 6 . The electron saturation velocity is not constant.

Image of FIG. 6.
FIG. 6.

The saturation velocity from effective mobility fits is plotted against the temperature for holes (a) and electrons (b). Note the zero-suppression of the y-axis. The hole saturation velocity is constant over the measured temperature range, whereas the electron saturation velocity is not.

Image of FIG. 7.
FIG. 7.

The low-field mobility is plotted against the temperature on double-logarithmic scale. The inset shows the mobility for a zoomed range from 200 K to 300 K. The results for all three samples are shown: as , as , and as ×. Superimposed are the fits (solid and short dashed line) for the APS + NIM model (see text) in the entire temperature range, and the only APS-only model (long dashed line) for .

Tables

Generic image for table
Table I.

The drift velocity (in ) for holes and electrons at various temperatures for three SUTs at (E ). The sample average is given in the last two columns.

Generic image for table
Table II.

The low-field mobility in for holes and electrons at various temperatures.

Generic image for table
Table III.

The fit results under the assumption of the APS-only model for holes (200 K–300 K) and the APS + NIS model for holes (2 K–300 K) and electrons (2 K–150 K).

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/content/aip/journal/jap/113/17/10.1063/1.4802679
2013-05-06
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of charge carrier mobility in single-crystal chemical vapour deposition diamond
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4802679
10.1063/1.4802679
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