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Heteroepitaxy of GaAs on (001) ⇒ 6° Ge substrates at high growth rates by hydride vapor phase epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

GaAs growth rate as a function of deposition temperature for a constant supersaturation condition. Growth rate is temperature dependent at low temperatures (kinetically limited) and temperature independent at high temperatures (transport limited). The kinetically limited growths were fit to a linear regression model to determine activation energy.

Image of FIG. 2.
FIG. 2.

(a)-(f) Surface Nomarski contrast micrographs of a series of GaAs on Ge samples grown at varying depostion temperature (). In all images, the scale bar is 50 m.

Image of FIG. 3.
FIG. 3.

RMS surface roughness as a function of deposition temperature as determined by AFM.

Image of FIG. 4.
FIG. 4.

-2 XRD peak FWHM as a function of deposition temperature.

Image of FIG. 5.
FIG. 5.

(a) GaAs growth rate as a function of thermodynamic supersaturation (). (b) RMS surface roughness (left axis), and -2 xrd peak FWHM (right axis) as a function of . was held at 720 °C for all depositions.

Image of FIG. 6.
FIG. 6.

(220) bright field TEM images of the GaAs/Ge interface of the sample grown at (a) 775 °C and (b) 725 °C. A number of defects resembling anti-phase domain boundaries are visible along the GaAs/Ge interface in (a). These defects generally appear to self-annihilate after at most 100 nm. The sample grown at 725 °C exhibited a heterointerface completely free of APDs.

Image of FIG. 7.
FIG. 7.

Ge concentration profile near the Ge/GaAs interface of an HVPE GaAs layer grown at 650 °C as measured by SIMS. Region A is the Ge substrate, while B-D are regions in the GaAs layer. Region B has been fit to Kavanagh's vacancy aided diffusion model, while region C was fit by a concentration independent, semi-infinite diffusion model.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Heteroepitaxy of GaAs on (001) ⇒ 6° Ge substrates at high growth rates by hydride vapor phase epitaxy