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Interfacial dead layer effects on current-voltage characteristics in asymmetric ferroelectric tunnel junctions
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10.1063/1.4803151
/content/aip/journal/jap/113/17/10.1063/1.4803151
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4803151
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Sketch of the asymmetric FTJ with two interfacial dead layers, and stand for the screening charges in the left and right electrodes, respectively.

Image of FIG. 2.
FIG. 2.

hysteresis loops of the SRO/BTO/Pt junction with interface layers (solid line) and without interface layers (dashed line). The barrier thickness is 2.4 nm.

Image of FIG. 3.
FIG. 3.

loops of the SRO/BTO/Pt junction with interface layers for different thicknesses of the BTO barrier: 1.6 nm (dashed line) and 2.4 nm (solid line).

Image of FIG. 4.
FIG. 4.

Current-voltage characteristic of SRO/BTO/Pt junction (a) without consideration of interfacial layers and (b) with interfacial dead layers. The barrier thickness of BTO is 1.6 nm, arrows indicate scanning directions of the applied voltage, and the inset in (b) is an enlarged image corresponding to the low range of the bias voltage.

Image of FIG. 5.
FIG. 5.

Current density as a function of (a) the magnitude of the left interface polarization and (b) the magnitude of for different barrier thicknesses: 1.6 nm (dashed line) and 2.4 nm (solid line). Here, the bias voltage is taken as 1.0 V. The insets are the profile of total potential energy for different values of and .

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/content/aip/journal/jap/113/17/10.1063/1.4803151
2013-05-01
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interfacial dead layer effects on current-voltage characteristics in asymmetric ferroelectric tunnel junctions
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4803151
10.1063/1.4803151
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