Sketch of the asymmetric FTJ with two interfacial dead layers, and stand for the screening charges in the left and right electrodes, respectively.
P–E hysteresis loops of the SRO/BTO/Pt junction with interface layers (solid line) and without interface layers (dashed line). The barrier thickness is 2.4 nm.
P–E loops of the SRO/BTO/Pt junction with interface layers for different thicknesses of the BTO barrier: 1.6 nm (dashed line) and 2.4 nm (solid line).
Current-voltage characteristic of SRO/BTO/Pt junction (a) without consideration of interfacial layers and (b) with interfacial dead layers. The barrier thickness of BTO is 1.6 nm, arrows indicate scanning directions of the applied voltage, and the inset in (b) is an enlarged image corresponding to the low range of the bias voltage.
Current density as a function of (a) the magnitude of the left interface polarization PiL and (b) the magnitude of PiR for different barrier thicknesses: 1.6 nm (dashed line) and 2.4 nm (solid line). Here, the bias voltage is taken as 1.0 V. The insets are the profile of total potential energy for different values of PiL and PiR .
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