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Optical properties of “black silicon” formed by catalytic etching of Au/Si(100) wafers
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10.1063/1.4803152
/content/aip/journal/jap/113/17/10.1063/1.4803152
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4803152
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Top and cross-sectional (CS) SEM images of Si samples catalytic-etched in HF:HO = 50 ml: ml solutions with  = 1–12 ml at 30 °C for 30 min. The deposited Au film thickness was 10 nm. After catalytic etching, the Au films were etch-removed in HCl/HNO solution (60 min).

Image of FIG. 2.
FIG. 2.

Top and cross-sectional (CS) SEM images of Si samples catalytic-etched in HF:HO = 50 ml: 2 ml solution at 30 °C for 30 min. The Au film thickness was varied from 1 to 30 nm. After catalytic etching, the Au films were etch-removed in HCl/HNO solution (60 min).

Image of FIG. 3.
FIG. 3.

Top and cross-sectional (CS) SEM images of Si samples catalytic-etched in HF:HO = 50 ml: 2 ml solution at 30 °C for  = 10–60 min. The deposited Au film thickness was 10 nm. After catalytic etching, the Au films were etch-removed in HCl/HNO solution (60 min).

Image of FIG. 4.
FIG. 4.

Contact angles obtained from (a) Si sample catalytic-etched in HF:HO = 50 ml: 2 ml solution at 30 °C for 30 min followed by HCl/HNO etching for 60 min for the deposited Au film (10 nm thickness) removal and (b) Si sample catalytic-etched in HF:HO = 50 ml: 2 ml solution at 30 °C for 30 min, etched in HCl/HNO solution for 60 min, and finally etch-cleaned in HF solution (50% HF, 20 min).

Image of FIG. 5.
FIG. 5.

Room-temperature FTIR spectra of Si samples catalytic-etched in HF:HO = 50 ml: ml solutions with  = 1–12 ml at 30 °C for 30 min. The deposited Au film thickness was 10 nm. After catalytic etching, the Au films were etch-removed in HCl/HNO solution (60 min).

Image of FIG. 6.
FIG. 6.

Room-temperature transmittance spectra in the interband transition region of Si samples catalytic-etched in HF:HO = 50 ml: ml solutions with  = 1–12 ml at 30 °C for 30 min. The deposited Au film thickness was 10 nm. After catalytic etching, the Au films were etch-removed in HCl/HNO solution (60 min).

Image of FIG. 7.
FIG. 7.

Room-temperature FTIR spectra of Si samples catalytic-etched in HF:HO = 50 ml: 2 ml solution at 30 °C for 30 min. The Au film thickness was varied from 1 to 30 nm. After catalytic etching, the Au films were etch-removed in HCl/HNO solution (60 min).

Image of FIG. 8.
FIG. 8.

Room-temperature transmittance spectra in the interband transition region of Si samples catalytic-etched in HF:HO = 50 ml: 2 ml solution at 30 °C for 30 min. The Au film thickness was varied from 1 to 30 nm. After catalytic etching, the Au films were etch-removed in HCl/HNO solution (60 min).

Image of FIG. 9.
FIG. 9.

Room-temperature transmittance spectra in the interband transition region of Si samples catalytic-etched in HF:HO = 50 ml: 2 ml solution at 30 °C for  = 10–60 min. The deposited Au film thickness was 10 nm. After catalytic etching, the Au films were etch-removed in HCl/HNO solution (60 min).

Image of FIG. 10.
FIG. 10.

PL and optical absorption constants ( , PLE) for (a) -Si and (b) porous nanocrystalline Si (SiNWs). The corresponding energy-band structures and light-emitting dipole transitions (PL) are shown on the light-hand side of each figure.

Image of FIG. 11.
FIG. 11.

(a) Integrated PL intensity versus HO (30%) concentration for Si samples catalytic-etched in HF:HO = 50 ml: ml solutions with varied from 1 to 12 ml. The Au film thickness was 10 nm and etching time was 30 min. (b) As in (a), but for PL peak energy ( ) [PL peak wavelength ( )] versus plots. PL measurements were performed after removing Au films in HCl/HNO solution (60 min).

Image of FIG. 12.
FIG. 12.

PL decay curve for catalytic-etched sample [Fig. 10(b) ] measured at 300 K and ∼ 600 nm, together with that for the anodic PSi sample. The anodic PSi sample was synthesized using a closed-circuit anodic system under Xe lamp illumination. The solid lines show the results calculated using Eq. (2) .

Image of FIG. 13.
FIG. 13.

(a) Room-temperature Raman spectra measured by excitation at 488 nm (Ar ion laser) for Si samples catalytic-etched in HF:HO = 50 ml: ml solutions with varied from 1 to 12 ml. The Au film thickness was 10 nm and etching time was 30 min. After catalytic etching, the Au films were removed in HCl/HNO solution (60 min). (b) Integrated Raman intensity ( ) versus HO concentration () plots.

Image of FIG. 14.
FIG. 14.

Room-temperature Raman spectra for (a) bulk Si and (b) Si sample catalytic-etched in HF:HO = 50 ml: 2 ml solution. The light solid (red) lines in (a) and (b) show the results calculated using Eq. (2) with = 519.4 cm and  = 3.2 cm. The heavy solid (black) line in (b) also show the result calculated using Eq. (3) with  = 519.2 cm,  = 4.0 cm, and  = 100.

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/content/aip/journal/jap/113/17/10.1063/1.4803152
2013-05-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical properties of “black silicon” formed by catalytic etching of Au/Si(100) wafers
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4803152
10.1063/1.4803152
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