Schematic view of the sample holder in IMPACT chamber. The 1×1 cm2 sample is held on by a metallic clamp, which is grounded from the body of the copper target holder through the picometer. Sputtering was performed at a 0° rotation while XPS and SEE were performed at 45° from the Z axis.
(a) Current profiles of freshly sputtered Au film grown on quartz, taken with forward (from 40 to 3500 eV) and reverse (from 3500 to 40 eV) sweeps. (b) Calculated penetration depth of injected electrons on Au, assuming constant energy loss with material where the constants taken from labeled references.
Current profiles of freshly sputtered Au film grown on quartz as a function of Ep in forward (from 40 to 3500 eV) sweep, compared to a sample which has not been sputter cleaned.
Current profiles of freshly sputtered C and Si as a function of Ep in forward sweep (from 40 to 3500 eV).
SEE spectra of Au film in forward sweep up to 1000 eV for clarity, where each spectrum takes 2 min 45 s. The inset shows the variation of the inelastic peak intensity with increasing Ep, while ↑ indicates the flashover point.
SEE spectra of Au film in reverse sweep, showing from 1000 eV for better projection, where each spectrum takes 2 min 45 s. The inset shows the change in the inelastic peak intensity with decreasing Ep.
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