Panchromatic CL image of (a) GaN on CSPS and (c) GaN on planar. (b) Optical transmission microscope image of GaN on CSPS including Pt marker at the same position. [(d) and (e)] asymmetric (105) x-ray RSMs of InGaN MQWs grown on CSPS and planar sapphire substrates, respectively.
(a) Schematic of MQW on CSPS substrate. (b) Cross-sectional TEM image and magnified TEM image of MQW region of InGaN MQW on CSPS substrate. (c) Symmetric (002) and (d) asymmetric (102) reflection XRD ω-scan rocking curves measured both MQW on CSPS and planar substrates.
PL and PLE spectra obtained at 10 K for InGaN MQWs grown on planar (a) and CSPS (b) substrates, respectively. The PLE absorption edges of the InGaN MQWs grown on CSPS and planar substrates were found to be 2.825 and 2.859 eV, respectively.
PL lifetime τPL, and radiative and nonradiative recombination lifetimes (τrad and τnrad) deduced from the temperature-dependent time-resolved PL data and integrated PL intensity for InGaN MQWs on (a) planar and (b) CSPS substrates. An excitation wavelength of 405 nm was used for both PL and TRPL.
EQE and output power of LEDs formed on CSPS (triangles) and planar sapphire (circles) substrates as a function of forward current.
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