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Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates
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10.1063/1.4803515
/content/aip/journal/jap/113/17/10.1063/1.4803515
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4803515
/content/aip/journal/jap/113/17/10.1063/1.4803515
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/content/aip/journal/jap/113/17/10.1063/1.4803515
2013-05-06
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4803515
10.1063/1.4803515
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