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Observation of photo darkening in self assembled InGaAs/GaAs quantum dots
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) PL spectra at different moments under continuous laser irradiation. The GaAs peak is magnified tenfold to give an intuitive comparison. The last (purple) curve is a typical spectrum after 18 h holding in the darkness. (b) Integrated PL intensity of QD emission as a function of laser irradiation time before and after holding in the darkness. The inset of (b) shows the peak position of GaAs band edge emission as a function of laser power. The estimated temperature is shown on the right axis.

Image of FIG. 2.
FIG. 2.

(a) PL degradation as a function of the laser irradiation time at different laser powers. (b) The stretching exponential fitting results for PL degradation at different laser powers.

Image of FIG. 3.
FIG. 3.

(a) Three normalized PL spectra at different moments during the laser irradiation. The applied laser power is 130 mw. The green dashed curves are the Gaussian fitting (the ground state, the first, and second excited states) for the t = 0 min spectrum. (b) A comparison of the PL intensity degradation for the decomposed GS, ES1, and ES2 of the QD emission.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of photo darkening in self assembled InGaAs/GaAs quantum dots