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Measurement of the specific heat and determination of the thermodynamic functions of relaxed amorphous silicon
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10.1063/1.4803888
/content/aip/journal/jap/113/17/10.1063/1.4803888
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4803888
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Excess specific heat of a-Si:H, , as a function of the temperature measured after annealing sample A at different temperatures to reduce the hydrogen content. After annealing it 6 times at 920 K, n became negligible. Inset: dependence of on the hydrogen content.

Image of FIG. 2.
FIG. 2.

Evolved gas analysis curve of dehydrogenation for sample A.

Image of FIG. 3.
FIG. 3.

Excess specific heat of dehydrogenated sample B for T > 120 K (stars). The open points and full squares are taken from the literature. Inset: upper bound for the entropy variation up to 100 K.

Image of FIG. 4.
FIG. 4.

Excess Gibbs free energy of relaxed a-Si. The dotted line takes into account the maximum contribution of . The upper curve is the free energy for the a-Si with maximum crystallization enthalpy (maximum density of structural defects) reported so far. Intersection with the curve of liquid Si delivers the expected melting points of a-Si that can be compared to the melting point of c-Si (1687 K). The horizontal bar is the only experimental determination of T.

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/content/aip/journal/jap/113/17/10.1063/1.4803888
2013-05-07
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Measurement of the specific heat and determination of the thermodynamic functions of relaxed amorphous silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4803888
10.1063/1.4803888
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