Excess specific heat of a-Si:H, , as a function of the temperature measured after annealing sample A at different temperatures to reduce the hydrogen content. After annealing it 6 times at 920 K, nH became negligible. Inset: dependence of on the hydrogen content.
Evolved gas analysis curve of dehydrogenation for sample A.
Excess specific heat of dehydrogenated sample B for T > 120 K (stars). The open points and full squares are taken from the literature. Inset: upper bound for the entropy variation up to 100 K.
Excess Gibbs free energy of relaxed a-Si. The dotted line takes into account the maximum contribution of . The upper curve is the free energy for the a-Si with maximum crystallization enthalpy (maximum density of structural defects) reported so far. 4 Intersection with the curve of liquid Si delivers the expected melting points of a-Si that can be compared to the melting point of c-Si (1687 K). The horizontal bar is the only experimental determination of Tal.
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