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Terahertz photomixing using plasma resonances in double-graphene layer structures
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10.1063/1.4804063
/content/aip/journal/jap/113/17/10.1063/1.4804063
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4804063
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic view of the DG-PM with double-GL device (upper panel). Lower panels correspond to DG-PM structures with the system of multiple stacked double-GLs and to DG-PM integrated with an optical waveguide.

Image of FIG. 2.
FIG. 2.

Energy band diagram for the device under consideration with thermionic inter-GL current (upper panel) and with tunneling inter-GL current (lower panel) at bias voltage. Quantity is the difference of local potentials in GLs, which under dc conditions is equal to .

Image of FIG. 3.
FIG. 3.

Normalized output power versus frequency for different values of electron and hole collision frequency ν and for  = 0.25 ps, i.e., (upper panel) and for  = 0.1 ps, i.e., (lower panel). Inset on the upper panel shows the peaks corresponding to the first resonant frequency ( = 1) for and .

Image of FIG. 4.
FIG. 4.

Normalized output power versus frequency for different values of parameters / corresponding the plasma frequency in the range .

Image of FIG. 5.
FIG. 5.

Frequency dependences of output power for different values of recharging time . The chosen value of parameter / at  = 10 nmc and 2 = 1060 nm corresponds to electron and hole densities .

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/content/aip/journal/jap/113/17/10.1063/1.4804063
2013-05-07
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Terahertz photomixing using plasma resonances in double-graphene layer structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4804063
10.1063/1.4804063
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