Schematic view of the DG-PM with double-GL device (upper panel). Lower panels correspond to DG-PM structures with the system of multiple stacked double-GLs and to DG-PM integrated with an optical waveguide.
Energy band diagram for the device under consideration with thermionic inter-GL current (upper panel) and with tunneling inter-GL current (lower panel) at bias voltage. Quantity is the difference of local potentials in GLs, which under dc conditions is equal to V 0.
Normalized output power versus frequency for different values of electron and hole collision frequency ν and for L/s = 0.25 ps, i.e., (upper panel) and for L/s = 0.1 ps, i.e., (lower panel). Inset on the upper panel shows the peaks corresponding to the first resonant frequency (n = 1) for and .
Normalized output power versus frequency for different values of parameters L/s corresponding the plasma frequency in the range .
Frequency dependences of output power for different values of recharging time . The chosen value of parameter L/s at d = 10 nmc and 2L = 1060 nm corresponds to electron and hole densities .
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