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Dielectric properties of lead lanthanum zirconate titanate thin films with and without ZrO2 insertion layers
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10.1063/1.4804170
/content/aip/journal/jap/113/17/10.1063/1.4804170
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4804170
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Scanning electron microscopy cross-sectional images of (a) pure PLZT film and (b) PLZT/ZrO film on Pt-Si substrates.

Image of FIG. 2.
FIG. 2.

Temperature-dependent dielectric permittivity for pure PLZT film and PLZT/ZrO film on Pt-Si substrates measured at 1 kHz, 10 kHz, 100 kHz, and 1 MHz.

Image of FIG. 3.
FIG. 3.

Frequency dependence of dielectric properties measured at room temperature for pure PLZT and PLZT/ZrO on Pt-Si substrates. Inset shows the RT tunability as a function of applied field measured at 10 kHz for pure PLZT and PLZT/ZrO on Pt-Si substrates.

Image of FIG. 4.
FIG. 4.

DC bias voltage dependence of dielectric properties as various frequencies measured at room temperature for (a) pure PLZT and (b) PLZT/ZrO on Pt-Si substrates.

Image of FIG. 5.
FIG. 5.

Leakage current density () vs. applied field () for (a) pure PLZT and (b) PLZT/ZrO on Pt-Si substrates. The slope values are shown.

Image of FIG. 6.
FIG. 6.

Leakage current density at different temperatures for (a) pure PLZT and (b) PLZT/ZrO on Pt-Si substrates.

Image of FIG. 7.
FIG. 7.

Leakage current density vs. reciprocal temperature for PLZT films with and without ZrO insertion layers on Pt-Si substrates. The values are shown.

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/content/aip/journal/jap/113/17/10.1063/1.4804170
2013-05-07
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dielectric properties of lead lanthanum zirconate titanate thin films with and without ZrO2 insertion layers
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/17/10.1063/1.4804170
10.1063/1.4804170
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