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Optimization of microstructure and optical properties of VO2 thin film prepared by reactive sputtering
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10.1063/1.4803840
/content/aip/journal/jap/113/18/10.1063/1.4803840
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/18/10.1063/1.4803840

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of as-deposited thin films at O flow ratio of (1) 2.0%, (2) 3.0%, (3) 3.5%, (4) 4.0%, (5) 5.5%, and (6) 7.5%.

Image of FIG. 2.
FIG. 2.

XRD patterns of as-deposited thin films at sputtering power of (1) 250, (2) 300, (3) 330, (4) 350, and (5) 400 W.

Image of FIG. 3.
FIG. 3.

FESEM images of as-deposited thin films at sputtering power of (a) 300, (b) 330, (c) 350, and (d) 400 W. (e) Cross-sectional FESEM image of (c).

Image of FIG. 4.
FIG. 4.

XRD patterns of as-deposited vanadium oxides thin films at gas pressure of (1) 0.1, (2) 0.2, (3) 0.3, (4) 0.4, and (5) 0.5 Pa.

Image of FIG. 5.
FIG. 5.

V2p and O1s core level XPS pattern of vanadium dioxides thin films deposited with gas pressure of 0.3 Pa.

Image of FIG. 6.
FIG. 6.

FESEM images of as-deposited vanadium oxides thin films at gas pressure of (a) 0.2, (b) 0.3, (c) 0.4, and (d) 0.5 Pa. (e) Cross-sectional FESEM image of (b).

Image of FIG. 7.
FIG. 7.

Optical switching properties of as-deposited vanadium oxides thin films at gas pressure of (1) 0.2, (2) 0.3, (3) 0.4, and (4) 0.5 Pa.

Image of FIG. 8.
FIG. 8.

Temperature-dependence IR patterns of vanadium dioxides thin films deposited with gas pressure of 0.3 Pa at 30 °C (solid curve) and 70 °C (dotted curve), and glass substrate (dashed curve).

Image of FIG. 9.
FIG. 9.

Optical switching properties of as-deposited vanadium oxides thin films sputtering for the time of 5 and 10 min with the thicknesses of 200 and 400 nm, respectively.

Image of FIG. 10.
FIG. 10.

Dependence the hysteresis width on the grain size for the as-deposited VO (M) thin films sputtering at different conditions.

Image of FIG. 11.
FIG. 11.

(a) Refractive index and (b) extinction coefficient of VO thin films sputtered at gas pressure of (1) 0.2, (2) 0.3, and (3) 0.4 Pa.

Image of FIG. 12.
FIG. 12.

Plots of and () vs. of VO thin films deposited at gas pressure of (1) 0.2, (2) 0.3, and (3) 0.4 Pa.

Tables

Generic image for table
Table I.

Experimental parameters for the growth of vanadium oxides thin film, the corresponding grain sizes calculated from XRD, and film thicknesses from FESEM image.

Generic image for table
Table II.

Optical switching properties of VO (M) thin film at different gas pressures.

Generic image for table
Table III.

Optical switching properties of VO (M) thin film sputtering for different times.

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/content/aip/journal/jap/113/18/10.1063/1.4803840
2013-05-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optimization of microstructure and optical properties of VO2 thin film prepared by reactive sputtering
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/18/10.1063/1.4803840
10.1063/1.4803840
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