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Bandgap tuning of mono- and bilayer graphene doped with group IV elements
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10.1063/1.4804060
/content/aip/journal/jap/113/18/10.1063/1.4804060
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/18/10.1063/1.4804060

Figures

Image of FIG. 1.
FIG. 1.

Unit cells for doped monolayer graphene; counterclockwise from top left: ½, ⅙, non-neighboring, concentrations.

Image of FIG. 2.
FIG. 2.

The band structure for Si doped graphene at ½ concentration. The energy gap is direct and is at the K-point in the Brillouin zone. The density of states is in arbitrary units.

Image of FIG. 3.
FIG. 3.

Atomic positions in the unit cell for doped bilayer graphene. Circles indicate carbon while squares indicate dopant atoms. White indicates top layer and black indicates bottom layer.

Image of FIG. 4.
FIG. 4.

Conformational energy (eV) versus interlayer separation (angstrom) in bilayers of silicon(a), germanium(b), and tin(c) doped graphene.

Image of FIG. 5.
FIG. 5.

The band structure for Si doped (½) bilayer graphene (AB) with and without an applied electric field. The energy gap is indirect where the valence band maximum is near the K-point and the conduction band minimum is near the M-point in the Brillouin zone. The no field gap is 1.64 eV, which changes to 1.49 eV when a 3 V/nm field is applied.

Tables

Generic image for table
Table I.

Bandgaps (eV) and effective masses (electron/hole) for doped monolayer graphene. For the ⅙ concentration, no bandgap was observed for all the dopants.

Generic image for table
Table II.

Interlayer spacings, d (Å) and bandgaps (eV) for doped bilayer graphene.

Generic image for table
Table III.

Bandgap shifts (meV) at 3 V/nm for doped bilayers.

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/content/aip/journal/jap/113/18/10.1063/1.4804060
2013-05-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bandgap tuning of mono- and bilayer graphene doped with group IV elements
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/18/10.1063/1.4804060
10.1063/1.4804060
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