Unit cells for doped monolayer graphene; counterclockwise from top left: ½, ⅙, 2 ∕ 6 non-neighboring, 2∕6 concentrations.
The band structure for Si doped graphene at ½ concentration. The energy gap is direct and is at the K-point in the Brillouin zone. The density of states is in arbitrary units.
Atomic positions in the unit cell for doped bilayer graphene. Circles indicate carbon while squares indicate dopant atoms. White indicates top layer and black indicates bottom layer.
Conformational energy (eV) versus interlayer separation (angstrom) in bilayers of silicon(a), germanium(b), and tin(c) doped graphene.
The band structure for Si doped (½) bilayer graphene (AB) with and without an applied electric field. The energy gap is indirect where the valence band maximum is near the K-point and the conduction band minimum is near the M-point in the Brillouin zone. The no field gap is 1.64 eV, which changes to 1.49 eV when a 3 V/nm field is applied.
Bandgaps (eV) and effective masses (electron/hole) a for doped monolayer graphene. For the ⅙ concentration, no bandgap was observed for all the dopants.
Interlayer spacings, dz (Å) and bandgaps (eV) for doped bilayer graphene.
Bandgap shifts (meV) at 3 V/nm for doped bilayers.
Article metrics loading...
Full text loading...