Schematic configuration of the photo Ψ-MOSFET.
Id–Vg characteristic for Ψ-MOSFET operated in dark (triangle) and under laser illumination (square).
(a) Experimental and (b) TCAD-simulated values of excess photo-current ΔId versus gate voltage in photo-Ψ-MOSFET.
Schematic band diagram and recombination assisted by interface defects for (a) Vg < 0 and (b) Vg > 0.
(a) TCAD simulation: potential difference in the substrate between light and dark conditions at Vg = −10 V. (b) Schematic band diagram of substrate: space charge region reduction due to the light (for a negative Vg).
Recombination lifetime versus carrier concentration.
Summary of extracted parameters for electron and hole channels.
Compared values of Dit extracted from static Id-Vg and photo Ψ-MOSFET.
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