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Photo-pseudo-metal–oxide–semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials
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10.1063/1.4804064
/content/aip/journal/jap/113/18/10.1063/1.4804064
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/18/10.1063/1.4804064

Figures

Image of FIG. 1.
FIG. 1.

Schematic configuration of the photo Ψ-MOSFET.

Image of FIG. 2.
FIG. 2.

I–V characteristic for Ψ-MOSFET operated in dark (triangle) and under laser illumination (square).

Image of FIG. 3.
FIG. 3.

(a) Experimental and (b) TCAD-simulated values of excess photo-current ΔI versus gate voltage in photo-Ψ-MOSFET.

Image of FIG. 4.
FIG. 4.

Schematic band diagram and recombination assisted by interface defects for (a) V < 0 and (b) V > 0.

Image of FIG. 5.
FIG. 5.

(a) TCAD simulation: potential difference in the substrate between light and dark conditions at V = −10 V. (b) Schematic band diagram of substrate: space charge region reduction due to the light (for a negative V).

Image of FIG. 6.
FIG. 6.

Recombination lifetime versus carrier concentration.

Tables

Generic image for table
Table I.

Summary of extracted parameters for electron and hole channels.

Generic image for table
Table II.

Compared values of D extracted from static I-V and photo Ψ-MOSFET.

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/content/aip/journal/jap/113/18/10.1063/1.4804064
2013-05-09
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photo-pseudo-metal–oxide–semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/18/10.1063/1.4804064
10.1063/1.4804064
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