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Ultraviolet/visible photodiode of nanostructure Sn–doped ZnO/Si heterojunction
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10.1063/1.4804330
/content/aip/journal/jap/113/18/10.1063/1.4804330
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/18/10.1063/1.4804330
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic experimental setup of spray pyrolysis consist of: (1) leg, (2) holder of heater, (3) heater, (4) holder of substrate, (5) substrate, (6) thermocouple, (7) nozzle of spray gun, (8) solution prepared, (9) pressure regulator, (10) air compressor, and (11) power supply.

Image of FIG. 2.
FIG. 2.

X-ray diffraction spectrum after annealing and inset shows Williamson-Hall plot of SZO5/Si.

Image of FIG. 3.
FIG. 3.

SEM images of Sn doped ZnO/Si; (a) ZnO, (b) SZO1, (c) SZO2, (d) SZO3, (e) SZO4, and (f) SZO5.

Image of FIG. 4.
FIG. 4.

Elemental mapping of Zn (red), Sn (yellow), and O (green) for a SZO5 nanostructured.

Image of FIG. 5.
FIG. 5.

Reflectance spectrum of ZnO/Si and SZO5/Si. The inset shows spectra of halogen lamp in 11 cm distance away of SZO5/Si shows.

Image of FIG. 6.
FIG. 6.

Transmission spectrum of ZnO and SZO5.

Image of FIG. 7.
FIG. 7.

Effect of doping Sn on I-V characteristic of ZnO/Si diodes in dark. The inset shows the schematic circuit of the sample measurement.

Image of FIG. 8.
FIG. 8.

I-V characteristic of SZO5/Si heterojunction under illumination laser and halogen lamp, the inset shows I-V characteristics between two Ag contact on the surface of SZO5.

Image of FIG. 9.
FIG. 9.

I-V characteristic of SZO/Si heterojunction in reverse bias under illumination 325 nm and halogen lamp. The inset shows photocurrent of laser (325 nm) in large scale.

Image of FIG. 10.
FIG. 10.

Photocurrent response of SZO5/Si diode in different voltages with good reproducibility under illumination (a) visible (halogen lamp) and (b) UV light (325 nm).

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/content/aip/journal/jap/113/18/10.1063/1.4804330
2013-05-10
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultraviolet/visible photodiode of nanostructure Sn–doped ZnO/Si heterojunction
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/18/10.1063/1.4804330
10.1063/1.4804330
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