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Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes
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10.1063/1.4804415
/content/aip/journal/jap/113/18/10.1063/1.4804415
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/18/10.1063/1.4804415

Figures

Image of FIG. 1.
FIG. 1.

(a) A schematic model of the conventional planar LED chip. (b) A schematic model of a single CNL without TCL. (c) A schematic model of a single CNL with TCL. (d) A schematic distribution of core-shell nanowire arrays, which shows that the effects of the spacing between each nanowire is examined appropriately by the 3D simulation.

Image of FIG. 2.
FIG. 2.

The schematic structure of a single CNL. (a) The simulation structure with mesh grids constructed by the GMSH program. (b) The cross-sectional (x-y plane) potential distribution from the view of the c-axis (z-axis). (c) The cross-sectional (y-z plane) potential distribution from the view of the x-axis.

Image of FIG. 3.
FIG. 3.

(a) The vertical line plot of normalized radiative recombination along the outer nonpolar QW with various nanowire heights at current density equal to 300 A/cm. (b) IQE versus different current densities (A/cm) with various nanowire heights. The inset in (b) is the ratio of Auger recombination versus different current densities (A/cm).

Image of FIG. 4.
FIG. 4.

(a) The vertical line plot of normalized radiative recombination along the outer nonpolar QW with different resistivities of the TCL. (b) The cross-sectional radiative recombination distribution without the TCL from the view of y-axis (x-z plane). (c) The cross-sectional radiative recombination distribution with the optimized TCL from the view of y-axis (x-z plane). The current density is 300 A/cm for all cases.

Image of FIG. 5.
FIG. 5.

(a) The vertical line plot of normalized radiative recombination along the outer nonpolar QW for the optimized current spreading effect. The inset in (a) is the required resistivity of the TCL to optimize the current spreading effect with different nanowire heights. (b) IQE versus different current densities (A/cm) for the optimized current spreading effect. The current density is 300 A/cm for Figs. 5(a) and 5(b) .

Image of FIG. 6.
FIG. 6.

The comparison between the conventional planar LED and a single CNL. (a) The Overflow and Auger ratios versus different current densities (A/cm). (b) IQE versus different current densities (A/cm). (c) The lateral line plot of normalized radiative recombination along the nonpolar QWs at current density equal to 300 A/cm.

Image of FIG. 7.
FIG. 7.

(a) IQE versus different current densities (A/cm) with various nanowire diameters for 2D simulation. (b) IQE versus different current densities (A/cm) with various nanowire diameters for 3D simulation. (c) The vertical line plot of normalized radiative recombination along the outer nonpolar QW for the 2D and 3D simulation. (d) The vertical line plot of normalized radiative recombination along the outer nonpolar QW with various nanowire diameters. The current density is 300 A/cm for Figs. 7(c) and 7(d) .

Tables

Generic image for table
Table I.

The detailed parameters of each epi-layer for our simulation structures.

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/content/aip/journal/jap/113/18/10.1063/1.4804415
2013-05-13
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/18/10.1063/1.4804415
10.1063/1.4804415
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