(a) TEM image of an InAs/InP QR-NW. (b) SEM image of an InAs/InP QR-NW reported on a host-substrate.
μPL spectra of a single InAs/InP QR-NW for different polarizations of absorption (a) and emission measured at room (b) and low (c) temperatures.
Scheme of axes and angles relative to NWs and SEM images of the surface of the as-grown (001) (a) and (111) samples (b). (c) X-ray diffraction pole figure of the NWs on (111) sample. Black and white arrows show the spots located at and , respectively.
Emission intensity of NW ensembles as a function of the polarization of the absorption and collection for (001) sample (a) and (111) sample(b).
Calculated polarization anisotropies of NW ensembles of different kinds.
Dependence of the PL intensity on the angle for and for the Si(001) (a) and Si(111) (b) substrates correspondingly, fitted by the theoretical curve.
DLP*e as a function of excitation wavelength. The results from 2 different places on the sample are presented by dots of different shapes. Solid line represents simulation result for a NW with the diameter of 100 nm. The sample was excited by the light with the width of spectral line of about 50 nm, thus each dot should be considered as an average value in 20 nm range.
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