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Reproducibility in the negative differential resistance characteristic of In0.17Al0.83N/GaN resonant tunneling diodes—Theoretical investigation
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10.1063/1.4804414
/content/aip/journal/jap/113/19/10.1063/1.4804414
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/19/10.1063/1.4804414
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Dependence of electron drift velocity on electric field for InAlN and GaN materials at 300 K.

Image of FIG. 2.
FIG. 2.

(a) The conduction band profile and (b) the doping and the electron concentrations as well as the electric field distributions in the InAlN/GaN/InAlN (1/1/1 nm) quantum well without external bias voltage.

Image of FIG. 3.
FIG. 3.

Simulated I-V characteristics of InAlN/GaN RTD under the first forward and backward scans of bias voltage, where the trapping centers at and are taken into account.

Image of FIG. 4.
FIG. 4.

Static-state distribution of the transmission coefficient in the InAlN/GaN/InAlN quantum well, where the transmission peak corresponds to the first discrete energy level of the quantum well.

Image of FIG. 5.
FIG. 5.

Simulated I-V characteristics of InAlN/GaN RTD under the first forward scan of bias voltage, which takes the trapping centers at and and the trap density level varying from 10 to 10 cm into account.

Image of FIG. 6.
FIG. 6.

(a) I-V characteristics of InAlN/GaN RTD under 1st, 20th, and 50th forward scans of bias voltage, and (b) electron concentration, trap density, and ionized trap density profiles in the InAlN/GaN/InAlN quantum well with an external bias voltage of 0.953 V (V), where the trapping centers at and are taken into account.

Image of FIG. 7.
FIG. 7.

Dependence of I-V characteristics on (a) the GaN well width and (b) the InAlN barrier width of InAlN/GaN RTD.

Image of FIG. 8.
FIG. 8.

Simulated rf current and the rf voltage waveforms of NDR oscillator that consists of InAlN/GaN RTD and RLC resonant circuit.

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/content/aip/journal/jap/113/19/10.1063/1.4804414
2013-05-21
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reproducibility in the negative differential resistance characteristic of In0.17Al0.83N/GaN resonant tunneling diodes—Theoretical investigation
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/19/10.1063/1.4804414
10.1063/1.4804414
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