Dependence of electron drift velocity on electric field for In0.17Al0.83N and GaN materials at 300 K.
(a) The conduction band profile and (b) the doping and the electron concentrations as well as the electric field distributions in the InAlN/GaN/InAlN (1/1/1 nm) quantum well without external bias voltage.
Simulated I-V characteristics of InAlN/GaN RTD under the first forward and backward scans of bias voltage, where the trapping centers at Ea 1 and Ea 2 are taken into account.
Static-state distribution of the transmission coefficient in the InAlN/GaN/InAlN quantum well, where the transmission peak corresponds to the first discrete energy level of the quantum well.
Simulated I-V characteristics of InAlN/GaN RTD under the first forward scan of bias voltage, which takes the trapping centers at Ea 1 and Ea 2 and the trap density level varying from 1013 to 1018 cm−3 into account.
(a) I-V characteristics of InAlN/GaN RTD under 1st, 20th, and 50th forward scans of bias voltage, and (b) electron concentration, trap density, and ionized trap density profiles in the InAlN/GaN/InAlN quantum well with an external bias voltage of 0.953 V (VP), where the trapping centers at Ea 1 and Ea 2 are taken into account.
Dependence of I-V characteristics on (a) the GaN well width and (b) the InAlN barrier width of InAlN/GaN RTD.
Simulated rf current and the rf voltage waveforms of NDR oscillator that consists of InAlN/GaN RTD and RLC resonant circuit.
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