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The role of surface states in modification of carrier transport in silicon nanowires
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10.1063/1.4805031
/content/aip/journal/jap/113/19/10.1063/1.4805031
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/19/10.1063/1.4805031
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Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional and (b) planer SEM image of SiNWs arrays prepared by MACE technique. (c) Cross-sectional SEM image of SiNWs/PAA hybrid device and EDS spectra (inset). (d) Planer SEM image of SiNWs/PAA device. (e) Planer SEM image for SiNWs/PAA after etching with oxygen plasma to expose tips (Similar images were seen for both and -type SiNWs.). (f) Schematic diagram of SiNWs/PAA hybrid device.

Image of FIG. 2.
FIG. 2.

Comparison of characteristics at 290 K and 77 K for (a) -type SiNWs/PAA hybrid device and -type SiNWs only device. (b) -type SiNWs/PAA hybrid device and -type SiNWs only device. (c) Comparison of activation energies () of and -type SiNWs/PAA hybrid device and and -type SiNWs only devices.

Image of FIG. 3.
FIG. 3.

(a) characteristics on double logarithmic graph of -type SiNWs only device to explain conduction mechanism in all temperature ranges (290 K–77 K). (b) Power law fits to the data from 110 K to 77 K. The fits meet at cross over voltage  = 0.85 eV.

Image of FIG. 4.
FIG. 4.

(a) Temperature dependent characteristics for -type SiNWs/PAA device fitted using Schottky thermionic emission model from 290 K to 77 K. (b) Temperature dependence of and calculated using Schottky thermionic emission model.

Image of FIG. 5.
FIG. 5.

(a) characteristics on double logarithmic graph of -type SiNWs device from 290 K to 77 K. (b) Power law fits to the data from 290 K to 77 K. The fits meet at cross over voltage  = 0.71 eV.

Image of FIG. 6.
FIG. 6.

characteristics on double logarithmic graph of -type SiNWs/PAA hybrid device to explain conduction mechanism at all temperatures (290 K–77 K).

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/content/aip/journal/jap/113/19/10.1063/1.4805031
2013-05-16
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The role of surface states in modification of carrier transport in silicon nanowires
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/19/10.1063/1.4805031
10.1063/1.4805031
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