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Enhanced temperature dependent junction magnetoresistance in La0.7Sr0.3MnO3/Zn(Fe, Al)O carrier induced dilute magnetic semiconductor junctions
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10.1063/1.4805052
/content/aip/journal/jap/113/19/10.1063/1.4805052
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/19/10.1063/1.4805052

Figures

Image of FIG. 1.
FIG. 1.

(a) High resolution XRD pattern of LSMO/ZnO metal-semiconductor junction on sapphire substrate. (b) Zoomed view of HRXRD along with Gaussian fit of (110) plane of LSMO and (201) plane of ZnO (inset). (c) and (d) are the FESEM image of surface and cross sectional view, respectively.

Image of FIG. 2.
FIG. 2.

(a) M-H loop of individual LSMO film up to 300 K. Inset is the temperature dependent magnetization plot for the non epitaxial LSMO film. (b) M-H loop of individual Zn(Fe)O at different temperatures. Upper inset shows the M-H loop of Zn(Fe)O with different Fe concentrations and lower inset is the comparative M-H loop of Zn(Fe)O and Zn(Fe,Al)O with 5% Fe and 1% Al. (c) Temperature dependent resistivity of LSMO films. Inset shows the %MR plot at different temperatures. (d) Temperature dependent resistivity of Zn(Fe)O films with different Fe concentrations. Inset shows the %MR plot at different temperatures.

Image of FIG. 3.
FIG. 3.

Room temperature J-V properties of LSMO/ZnO, LSMO/Zn(Fe)O and LSMO/Zn(Fe,Al)O metal-semiconductor junction. Upper inset shows the ohmic nature of I-V behavior for LSMO-Ag electrical contact at several temperatures (77–300 K). Lower inset shows the same for ZnO-In electrical contact (ohmic behavior).

Image of FIG. 4.
FIG. 4.

Room temperature J-V properties of (a) LSMO/ZnO, LSMO/Zn(Fe)O and (b) LSMO/Zn(Fe,Al)O metal-semiconductor junction with different Fe concentrations.

Image of FIG. 5.
FIG. 5.

(a) J-V properties of LSMO/ZnO metal-semiconductor junction at different isothermal temperatures, (b), (c), and (d) are the same plots for LSMO/Zn(Fe)O metal-semiconductor junction with 5%, 7%, and 10% Fe concentrations, respectively.

Image of FIG. 6.
FIG. 6.

(a), (b), and (c) isothermal J-V behaviors of LSMO/Zn(Fe,Al)O metal-semiconductor junction with 5%, 7%, and 10% Fe and 1% Al concentrations, respectively, measured at several different temperatures. (d) Temperature dependent series resistance plot for LSMO/ZnO, LSMO/Zn(Fe)O, and LSMO/Zn(Fe,Al)O with 5% Fe and 1% Al.

Image of FIG. 7.
FIG. 7.

(a) Isothermal J-V characteristics of LSMO/ZnO heterojunction at several different temperatures under 0.7 T applied magnetic field; (b), (c), and (d) are the same plots for LSMO/Zn(Fe)O metal-semiconductor junction with 5%, 7%, and 10% Fe concentrations, respectively.

Image of FIG. 8.
FIG. 8.

(a), (b), and (c) Isothermal J-V characteristics of LSMO/Zn(Fe,Al)O metal-semiconductor junction at several different temperatures under 0.7 T applied magnetic field with 5%, 7%, and 10% Fe concentrations, respectively. (b) Temperature dependent series resistance plot for LSMO/ZnO, LSMO/Zn(Fe)Om and LSMO/Zn(Fe,Al)O with 5% Fe and 1% Al under 0.7 T applied magnetic field.

Image of FIG. 9.
FIG. 9.

Comparative J-V characteristics of LSMO/ZnO (I), LSMO/Zn(Fe)O (II), and LSMO/Zn(Fe,Al)O (III) metal-semiconductor junction with and without applied 0.7 T magnetic field. The Fe and Al concentration are 5% and 1%, respectively. (a), (b), (c), and (d) are the same J-V characteristics measured at 77, 200, 250, and 300 K, respectively.

Image of FIG. 10.
FIG. 10.

Plot of junction magnetoresistance with applied magnetic field at (a) 77 K, (b) 200 K, (c) 250 K, and (d) 300 K of the LSMO/ZnO, LSMO/Zn(Fe)O, and LSMO/Zn(Fe,Al)O metal-semiconductor type junctions with 5% Fe concentration at a bias voltage of 3 V.

Image of FIG. 11.
FIG. 11.

Temperature dependent junction magnetoresistance plot for (a) LSMO/ZnO, (b) LSMO/Zn(Fe)O, and (c) LSMO/Zn(Fe,Al)O metal-semiconductor type junctions with 5% Fe concentration at three bias voltages 2.5, 3.5, and 4.5 V. (d) Plot of highest value of the percentage of junction magnetoresistance (left y-axis scale) at 250 K as well as magnetic moment change in μ/Fe (right y-axis scale) with increasing iron concentration for both LSMO/Zn(Fe)O and LSMO/Zn(Fe,Al)O metal-semiconductor type junctions.

Tables

Generic image for table
Table I.

Evaluated fit parameters from the J-V characteristics employing Eq. (1) with and without applied 0.7 T magnetic field.

Generic image for table
Table II.

Fit parameters (α and β) evaluated from Eq. (2) for undoped LSMO/ZnO, LSMO/Zn(Fe)O and LSMO/Zn(Fe, Al)O with 5% Fe, 1% Al doping.

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/content/aip/journal/jap/113/19/10.1063/1.4805052
2013-05-16
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced temperature dependent junction magnetoresistance in La0.7Sr0.3MnO3/Zn(Fe, Al)O carrier induced dilute magnetic semiconductor junctions
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/19/10.1063/1.4805052
10.1063/1.4805052
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