Device schematic (not to scale) of the surround gate MX2 nanotube MOSFET considered in our studies.
Calculated band structure of the various (n, n) MX2 SWNTs from our ab-initio simulations.
(a) Variation of direct band gap of (n,n) MX2 SWNT with nanotube diameter. (b) Variation of electron effective mass with diameter of MX2 SWNT. (c) Conduction band profile of the device for ON and OFF states. (d) Variation of channel conductance with gate bias and (e) transmission spectra under different bias conditions.
(a) The simulated ID-VD characteristics and the (b) ID-VG characteristics (VD = 0.4 V) of the MX2 nanotube surround gate MOSFETs. (c) Simulated transconductance (gm) for varying gate voltage (d) Simulated gm/ID ratio and (e) calculated cut-off frequencies for MX2 SWNT MOSFETs.
Comparison of simulated output parameters of various MX2 SWNT MOSFETs with ITRS recommendations for equivalent 10 nm planar technology node.
Variation of (a) simulated ON currents, (b) gate capacitance per unit channel length, and (c) intrinsic delay time for varying SWNT diameter. (d) ID-VG output characteristics (VD = 0.4 V) for WSe2 SWNT surround gate MOSFETs for short (10 nm) and long (100, 200 nm) channel lengths, long channel values obtained by projected backscattering method.
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