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Performance limits of transition metal dichalcogenide (MX2) nanotube surround gate ballistic field effect transistors
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10.1063/1.4805059
/content/aip/journal/jap/113/19/10.1063/1.4805059
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/19/10.1063/1.4805059
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Device schematic (not to scale) of the surround gate MX nanotube MOSFET considered in our studies.

Image of FIG. 2.
FIG. 2.

Calculated band structure of the various (, ) MX SWNTs from our simulations.

Image of FIG. 3.
FIG. 3.

(a) Variation of direct band gap of (,) MX2 SWNT with nanotube diameter. (b) Variation of electron effective mass with diameter of MX2 SWNT. (c) Conduction band profile of the device for ON and OFF states. (d) Variation of channel conductance with gate bias and (e) transmission spectra under different bias conditions.

Image of FIG. 4.
FIG. 4.

(a) The simulated I-V characteristics and the (b) I-V characteristics (V = 0.4 V) of the MX nanotube surround gate MOSFETs. (c) Simulated transconductance (g) for varying gate voltage (d) Simulated g/I ratio and (e) calculated cut-off frequencies for MX SWNT MOSFETs.

Image of FIG. 5.
FIG. 5.

Comparison of simulated output parameters of various MX SWNT MOSFETs with ITRS recommendations for equivalent 10 nm planar technology node.

Image of FIG. 6.
FIG. 6.

Variation of (a) simulated ON currents, (b) gate capacitance per unit channel length, and (c) intrinsic delay time for varying SWNT diameter. (d) I-V output characteristics (V = 0.4 V) for WSe SWNT surround gate MOSFETs for short (10 nm) and long (100, 200 nm) channel lengths, long channel values obtained by projected backscattering method.

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/content/aip/journal/jap/113/19/10.1063/1.4805059
2013-05-16
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Performance limits of transition metal dichalcogenide (MX2) nanotube surround gate ballistic field effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/19/10.1063/1.4805059
10.1063/1.4805059
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