In this paper, the effects of the incident light polarization on the bound to continuum linear absorption coefficient of quantum dot devices have been investigated. The study is based on the effective mass theory and the Non Equilibrium Green's Function formalism. For the bound to continuum component of the absorption coefficient, both of in-plane and perpendicular polarization effects are studied for different sizes of conical quantum dots. Generally, decreasing the dot's dimensions results in an increase of the in-plane polarized light absorption and in moving the absorption peak towards longer wavelengths. On the other hand, decreasing the dot's dimensions results in a decrease of the perpendicularly polarized light absorption coefficient and in moving the absorption peak towards longer wavelengths.
2.M. Razeghi, Technology of Quantum Devices (Springer, 2010).
3.V. Ryzhii, I. Khmyrova, M. Ryzhii, and V. Mitin, “ Comparison of dark current, responsivity and detectivity in different intersubband infrared photodetectors,” Semicond. Sci. Technol.19(1), 8–16 (2004).
7.M. Razeghi and M. Razeghi, Quantum Dot Infrared Photodetectors (Springer, US, 2010).
8.A. Martí, N. López, E. Antolín, E. Cánovas, C. Stanley, C. Farmer, L. Cuadra, and A. Luque, “ Novel semiconductor solar cell structures: The quantum dot intermediate band solar cell,” Thin Solid Films511–512, 638–644 (2006).
9.B. Kochman, A. Stiff-Roberts, S. Chakrabarti, J. Phillips, S. Krishna, J. Singh, and P. Bhattacharya, “ Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors,” IEEE J. Quantum Electron.39, 459–467 (2003).
11.G. Liu, K. Guo, H. Hassanabadi, L. Lu, and B. Yazarloo, “ A theoretical study of nonlinear optical absorption and refractive index changes with the three-dimensional ring-shaped pseudoharmonic potential,” Physica B415(0), 92–96 (2013).
14.S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, 1997).
15.S. Datta, Quantum Transport: Atom to Transistor (Cambridge University Press, 2005).
16.L. Lin, H. L. Zhen, N. Li, W. Lu, Q. C. Weng, D. Y. Xiong, and F. Q. Liu, “ Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors,” Appl. Phys. Lett.97(19), 193511 (2010).
17.H. S. Kim, J. H. Suh, C. G. Park, S. J. Lee, S. K. Noh, J. D. Song, Y. J. Park, W. J. Choi, and J. I. Lee, “ Structure and thermal stability of inas/GaAs quantum dots grown by atomic layer epitaxy and molecular beam epitaxy,” J. Cryst. Growth285(1–2), 137–145 (2005).
18.V. Celibert, E. Tranvouez, G. Guillot, C. Bru-Chevallier, L. Grenouillet, P. Duvaut, P. Gilet, P. Ballet, and A. Million, “ Mbe growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3 μm in single and stacked layers,” J. Cryst. Growth275(1–2), e2313–e2319 (2005); in Proceedings of the 14th International Conference on Crystal Growth and the 12th International Conference on Vapor Growth and Epitaxy, Grenoble, France, available at: http://www.sciencedirect.com/science/article/pii/S0022024804018858.
19.H. Lee, H. Park, and T. Kim, “ Formation mode of self-assembled cdte quantum dots directly grown on GaAs substrates,” J. Cryst. Growth291(2), 442–447 (2006).
23.S. L. Chuang, Physics of Photonic Devices (John Wiley & Sons, 2009).
24.S. Chuang, Physics of Optoelectronic Devices, Wiley Series in Pure and Applied Optics (John Wiley & Sons, 1995).
25.K. Lantz and A. Stiff-Roberts, “ Calculation of intraband absorption coefficients in organic/inorganic nanocomposites: Effects of colloidal quantum dot surface ligand and dot size,” IEEE J. Quantum Electron.47, 1420–1427 (2011).