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Graphene Hall bar with an asymmetric pn-junction
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10.1063/1.4805350
/content/aip/journal/jap/113/19/10.1063/1.4805350
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/19/10.1063/1.4805350
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematics of the Hall bar with the pn-junction.

Image of FIG. 2.
FIG. 2.

Schematic of the Hall bar with the pn-junction placed at  =  and indication of the different positions of the pn-interface.

Image of FIG. 3.
FIG. 3.

Electron densities for the pn-interface placed at  =  and . Values of applied magnetic field are shown in the figure. Arrows indicate the lead of injection.

Image of FIG. 4.
FIG. 4.

Plots of (a) the bend and (b) the Hall resistance in case when the pn-interface is at  = . Plots are made for different values of the applied potential in the second region (or equivalently different relative position of the Fermi energy). Values of scaled with Fermi energy are shown in the inset of (a).

Image of FIG. 5.
FIG. 5.

The same as Fig. 4 but now for a pn-interface at  =  + 0.3 W.

Image of FIG. 6.
FIG. 6.

Electron density for pn-interface placed at = + 0.3 W and . Values of applied magnetic field are shown in the figure. Arrows indicate the lead of injection.

Image of FIG. 7.
FIG. 7.

The same as Fig. 4 but now for a pn-interface at = + 0.7 W.

Image of FIG. 8.
FIG. 8.

Electron density for the pn-interface placed at = + 0.7 W and . Values of applied magnetic field are shown in the figure. Arrows indicate the lead of injection.

Image of FIG. 9.
FIG. 9.

The same as Fig. 4 but now for a pn-interface at = + .

Image of FIG. 10.
FIG. 10.

Electron density for points indicated in Fig. 9(a) for the pn-interface placed at = + and . The first row shows injection from lead 1 and the second row shows injection from lead 4.

Image of FIG. 11.
FIG. 11.

(a) The bend and (c) the Hall resistance versus magnetic field for applied potential . (b) The bend and (d) the Hall resistance versus magnetic field for applied potential .

Image of FIG. 12.
FIG. 12.

(a) The bend and (b) the Hall resistance versus the potential for different positions of the pn-interface. Plots are made for while the green vertical line shows the transition between nn- and np-regimes.

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/content/aip/journal/jap/113/19/10.1063/1.4805350
2013-05-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Graphene Hall bar with an asymmetric pn-junction
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/19/10.1063/1.4805350
10.1063/1.4805350
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