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Conversion mechanism of conductivity of phosphorus-doped ZnO films induced by post-annealing
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10.1063/1.4805778
/content/aip/journal/jap/113/19/10.1063/1.4805778
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/19/10.1063/1.4805778

Figures

Image of FIG. 1.
FIG. 1.

(a) Typical XRD spectrum of PZO films annealed at different temperatures. (b) Lattice constant of PZO films as a function of annealing temperature.

Image of FIG. 2.
FIG. 2.

83 K PL spectra of undoped ZnO films annealed at different temperatures. The inset shows the intensity ratio of Zn-related to V peaks as a function of annealing temperatures.

Image of FIG. 3.
FIG. 3.

83 K PL spectra of PZO films annealed at different temperatures.

Image of FIG. 4.
FIG. 4.

Temperature-dependent PL spectra of 800 °C-annealed PZO film. The inset shows the temperature-dependent peak energy of FA and the fitting curve using Eq. (1) for 800 °C-annealed PZO film.

Image of FIG. 5.
FIG. 5.

XPS spectra and fitting curve of 800 °C-annealed PZO film.

Tables

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Table I.

Electrical properties of undoped ZnO and PZO films measured by van der Pauw method at room temperature.

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/content/aip/journal/jap/113/19/10.1063/1.4805778
2013-05-20
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Conversion mechanism of conductivity of phosphorus-doped ZnO films induced by post-annealing
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/19/10.1063/1.4805778
10.1063/1.4805778
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