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Understanding temperature dependence of threshold voltage in pentacene thin film transistors
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10.1063/1.4807159
/content/aip/journal/jap/113/19/10.1063/1.4807159
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/19/10.1063/1.4807159
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Transfer characteristics of a pentacene-based OTFT measured in linear regime at 100 K, 200 K, and 290 K, where extraction of by linear extrapolation is shown.

Image of FIG. 2.
FIG. 2.

dependences of (a) and (b) in two different pentacene-based OTFTs, one with HMDS coating on SiO surface (square) and the other without (circle). Symbols are experimental data, and fitting lines are shown.

Image of FIG. 3.
FIG. 3.

AFM images of corresponding pentacene thin films in OTFTs shownin Fig. 2 , one with HMDS coating on SiO surface (a) and the other without (b).

Image of FIG. 4.
FIG. 4.

Schematic energy diagram for describing hole trap distribution () in pentacene-based OTFTs, where is controlled by .

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/content/aip/journal/jap/113/19/10.1063/1.4807159
2013-05-17
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Understanding temperature dependence of threshold voltage in pentacene thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/19/10.1063/1.4807159
10.1063/1.4807159
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