Transfer characteristics of a pentacene-based OTFT measured in linear regime at 100 K, 200 K, and 290 K, where extraction of VT by linear extrapolation is shown.
T dependences of (a) VT and (b) μ FE in two different pentacene-based OTFTs, one with HMDS coating on SiO2 surface (square) and the other without (circle). Symbols are experimental data, and fitting lines are shown.
AFM images of corresponding pentacene thin films in OTFTs shownin Fig. 2 , one with HMDS coating on SiO2 surface (a) and the other without (b).
Schematic energy diagram for describing hole trap distribution NT (E) in pentacene-based OTFTs, where VT is controlled by n deep.
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