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Annealing effect in boron-induced interface charge traps in Si/SiO2 systems
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10.1063/1.4773527
/content/aip/journal/jap/113/2/10.1063/1.4773527
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/2/10.1063/1.4773527
/content/aip/journal/jap/113/2/10.1063/1.4773527
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/content/aip/journal/jap/113/2/10.1063/1.4773527
2013-01-11
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Annealing effect in boron-induced interface charge traps in Si/SiO2 systems
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/2/10.1063/1.4773527
10.1063/1.4773527
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