(a) Rotational anisotropic measurements of initial (at t = 0 s) and nearly saturated (at t = 80 s) SHG signals in an as-received boron-doped Si/SiO2 sample with a laser beam power at 160 mW. Ψ = 0° corresponds to that the incident plane is parallel to 〈110〉 silicon crystal plane. (b) Schematic diagram of SHG experiment and a boron-induced charge trap model. The wavelength of the fundamental beam is 800 nm.
TD-SHG measurements of Si/SiO2: as-received, after annealed in 200 °C and 800 °C in about 1 mTorr vacuum and Ar gas, annealed in 190 °C and 800 °C in hydrogen gas.
(a)TD-SHG measurements of Si/SiO2 after annealed in 100 °C DI-water for 1 h with 215 mW laser beam power. (b)TD-SHG measurements of thermally grown oxide Si/SiO2 before and after annealing in 800 °C Ar with 160 mW laser beam power for both measurements. The oxide thickness is about 7.7 nm.
(a) Electron tunneling through a gate silicon oxide layer in a MOSFET device. (b) Schematic of electronic band diagram of boron associated electron charge traps in Si/SiO2 system, and electron tunneling through the oxide potential barrier.
(a) Raman spectra of boron-doped Si/SiO2 before and after annealed at 800 °C Ar gas. (b) Three different mechanisms for neutralizing boron-induced charge traps: (I) Electron reconfiguration, (II) desorption of surface adsorbate, and (III) remigration of boron associated charge traps.
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