A 4 × 4 μm2 AFM picture after injection of charges: (a) a-SiOxNy:H surface topography and (b) potential distribution over the same region; (c) cross-section profile of a-SiOxNy:H (γ = 100) surface potential after injection at 10 V during 2 min. Potential maximum and FWHM are defined.
Bright field TEM images: (a) example of the studied structure: Si-substrate, Ti-layer (d Ti = 70 nm), Au-layer (d Au = 260 nm), and the a-SiOxNy:H layer (γ = 100, d = 78.0 nm) and (b) closer view of the a-SiOxNy:H layer (γ = 100).
Charge profiles for different layers induced by injection at 25 V during 2 min.
Evolution of integrated intensity with injection time for different a-SiOxNy:H layers. Bias injection is fixed to (a) 10 V and (b) 25 V.
Evolution of FWHM broadening Δw with injection time, for different a-SiOxNy:H layers (different γ values). Bias injection is fixed to 10 V (closed symbols) or to 25 V (open symbols).
Current density versus electric field for different γ-values. Dotted line: fit to a PF function for γ = 5.
Evolution with time (delayed by 30 s, the time needed to start measurement after injection) after injection of the normalized potential maximum ΔVmn , normalized integrated intensity Isn , and peak FWHM broadening Δw for (a) γ = 100, (b) γ = 10, and (c) γ = 5. Bias injection is fixed to 10 V (closed symbols) or 25 V (open symbols) during 2 min.
cos(Δ)-variation for different incidence angles as a function of the wavelength in the spectral range 250 nm–850 nm of the Au-layer used in this work.
tan(Ψ) and cos(Δ) spectra of as-deposited Au-layer (black curve) and the same layer after thermal treatment at 300 °C during 16 h (red curve).
Light penetration depth of as-deposited Au-layer (black curve) and annealed Au-layer (red curve).
Refractive index on (a) and extinction coefficient on (b) of as-deposited Au-layer (black curve) and annealed Au-layer (red curve).
Thicknesses and optical properties of the a-SiOxNy:H layers.
Applied electric fields during charge injection and area roughness parameters of the investigated layers.
Voltage profile parameters taken 30 s after charging by the AFM tip (injection during 2 min).
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