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Kelvin force microscopy characterization of charging effect in thin a-SiOxNy:H layers deposited in pulsed plasma enhanced chemical vapor deposition process by tuning the Silicon-environment
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10.1063/1.4805026
/content/aip/journal/jap/113/20/10.1063/1.4805026
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/20/10.1063/1.4805026

Figures

Image of FIG. 1.
FIG. 1.

A 4 × 4 m AFM picture after injection of charges: (a) a-SiON:H surface topography and (b) potential distribution over the same region; (c) cross-section profile of a-SiON:H (γ = 100) surface potential after injection at 10 V during 2 min. Potential maximum and FWHM are defined.

Image of FIG. 2.
FIG. 2.

Bright field TEM images: (a) example of the studied structure: Si-substrate, Ti-layer (  = 70 nm), Au-layer (  = 260 nm), and the a-SiON:H layer (γ = 100,  = 78.0 nm) and (b) closer view of the a-SiON:H layer (γ = 100).

Image of FIG. 3.
FIG. 3.

Charge profiles for different layers induced by injection at 25 V during 2 min.

Image of FIG. 4.
FIG. 4.

Evolution of integrated intensity with injection time for different a-SiON:H layers. Bias injection is fixed to (a) 10 V and (b) 25 V.

Image of FIG. 5.
FIG. 5.

Evolution of FWHM broadening Δ with injection time, for different a-SiON:H layers (different γ values). Bias injection is fixed to 10 V (closed symbols) or to 25 V (open symbols).

Image of FIG. 6.
FIG. 6.

Current density versus electric field for different γ-values. Dotted line: fit to a PF function for γ = 5.

Image of FIG. 7.
FIG. 7.

Evolution with time (delayed by 30 s, the time needed to start measurement after injection) after injection of the normalized potential maximum Δ, normalized integrated intensity , and peak FWHM broadening Δ for (a) γ = 100, (b) γ = 10, and (c) γ = 5. Bias injection is fixed to 10 V (closed symbols) or 25 V (open symbols) during 2 min.

Image of FIG. 8.
FIG. 8.

cos(Δ)-variation for different incidence angles as a function of the wavelength in the spectral range 250 nm–850 nm of the Au-layer used in this work.

Image of FIG. 9.
FIG. 9.

tan(Ψ) and cos(Δ) spectra of as-deposited Au-layer (black curve) and the same layer after thermal treatment at 300 °C during 16 h (red curve).

Image of FIG. 10.
FIG. 10.

Light penetration depth of as-deposited Au-layer (black curve) and annealed Au-layer (red curve).

Image of FIG. 11.
FIG. 11.

Refractive index on (a) and extinction coefficient on (b) of as-deposited Au-layer (black curve) and annealed Au-layer (red curve).

Tables

Generic image for table
Table I.

Thicknesses and optical properties of the a-SiON:H layers.

Generic image for table
Table II.

Applied electric fields during charge injection and area roughness parameters of the investigated layers.

Generic image for table
Table III.

Voltage profile parameters taken 30 s after charging by the AFM tip (injection during 2 min).

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/content/aip/journal/jap/113/20/10.1063/1.4805026
2013-05-22
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Kelvin force microscopy characterization of charging effect in thin a-SiOxNy:H layers deposited in pulsed plasma enhanced chemical vapor deposition process by tuning the Silicon-environment
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/20/10.1063/1.4805026
10.1063/1.4805026
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